FDB075N15A-F085

FDB075N15A-F085
Mfr. #:
FDB075N15A-F085
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET NMOS D2PAK 150V 7.5 MOHM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDB075N15A-F085 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDB075N15A-F085 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
110 A
Rds On - Drain-Source-Widerstand:
20 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Qg - Gate-Ladung:
95 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
333 W
Aufbau:
Single
Qualifikation:
AEC-Q101
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FDB075N15A_F085
Transistortyp:
1 N-Channel
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
46 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
76 ns
Typische Einschaltverzögerungszeit:
33 ns
Teil # Aliase:
FDB075N15A_F085
Gewichtseinheit:
0.046296 oz
Tags
FDB075, FDB07, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive N-Channel PowerTrench® MOSFETs
ON Semiconductor Automotive N-Channel PowerTrench® MOSFETs are designed for automotive engine control, power-train management, solenoid and motor drivers, integrated starters/alternators, and as a primary switch for 12V systems. These MOSFETs are RoHS Compliant and qualified to AEC-Q101.Learn More
Automotive N-Channel MOSFETs
ON Semiconductor Automotive N-Channel MOSFETs are AEC-Q101 qualified power MOSFETs that are optimized for use in automotive applications. They feature UIS capability and are ROHS compliant. Typical applications include automotive engine control, PowerTrain management, solenoid, motor drive and as a primary switch for 12V systems.Learn More
Automotive Solutions
ON Semiconductor Automotive Solutions deliver performance, fuel economy and emission levels for today's and the future's vehicles. ON Semiconductor has a 50-year legacy as a worldwide automotive semiconductor supplier with leading-edge IGBTs, MOSFETs, ignition IGBTs, injector drivers, gate drivers and power modules. These high-quality, power-efficient components are used in engine management, electric power assisted steering (EPAS), motor drives, traction inverters, chargers, DC-DC converters, PTC heaters and other systems. Learn More
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Teil # Mfg. Beschreibung Aktie Preis
FDB075N15A_F085
DISTI # V36:1790_06337703
ON SemiconductorN-CHANNEL POWERTRENCH MOSFET0
  • 800000:$1.9010
  • 400000:$1.9040
  • 80000:$2.1720
  • 8000:$2.6530
  • 800:$2.7330
FDB075N15A-F085
DISTI # FDB075N15A-F085CT-ND
ON SemiconductorMOSFET N-CH 150V 110A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1684In Stock
  • 100:$3.3072
  • 10:$4.0370
  • 1:$4.4900
FDB075N15A-F085
DISTI # FDB075N15A-F085DKR-ND
ON SemiconductorMOSFET N-CH 150V 110A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1684In Stock
  • 100:$3.3072
  • 10:$4.0370
  • 1:$4.4900
FDB075N15A-F085
DISTI # FDB075N15A-F085TR-ND
ON SemiconductorMOSFET N-CH 150V 110A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
1600In Stock
  • 2400:$2.1900
  • 1600:$2.3053
  • 800:$2.7334
FDB075N15A-F085
DISTI # FDB075N15A-F085
ON SemiconductorTrans MOSFET N-CH 150V 110A 3-Pin TO-263 T/R (Alt: FDB075N15A-F085)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 8000:€1.8900
  • 3200:€2.0900
  • 4800:€2.0900
  • 1600:€2.1900
  • 800:€2.2900
FDB075N15A_F085
DISTI # FDB075N15A-F085
ON SemiconductorTrans MOSFET N-CH 150V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: FDB075N15A-F085)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 4800:$1.8900
  • 8000:$1.8900
  • 800:$1.9900
  • 1600:$1.9900
  • 3200:$1.9900
FDB075N15A-F085
DISTI # 48AC0881
ON SemiconductorNMOS D2PAK 150V 7.5 MOHM / REEL0
  • 1000:$2.8200
  • 500:$2.9900
  • 250:$3.2100
  • 100:$3.5000
  • 1:$4.2500
FDB075N15A-F085
DISTI # 512-FDB075N15A_F085
ON SemiconductorMOSFET NMOS D2PAK 150V 7.5 MOHM
RoHS: Compliant
757
  • 1:$4.1500
  • 10:$3.5200
  • 100:$3.0500
  • 250:$2.9000
  • 500:$2.6000
  • 800:$2.1900
  • 2400:$2.0800
Bild Teil # Beschreibung
NCV2250SN2T1G

Mfr.#: NCV2250SN2T1G

OMO.#: OMO-NCV2250SN2T1G

Analog Comparators SINGLE PUSH-PULL OUTPUT
TN5015H-6G-TR

Mfr.#: TN5015H-6G-TR

OMO.#: OMO-TN5015H-6G-TR

SCRs High temperature 50A SCRs
STB37N60DM2AG

Mfr.#: STB37N60DM2AG

OMO.#: OMO-STB37N60DM2AG

MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package
BQ78350DBTR-R1

Mfr.#: BQ78350DBTR-R1

OMO.#: OMO-BQ78350DBTR-R1

Battery Management BQ78350DBTR-R1
LTC3779IFE#PBF

Mfr.#: LTC3779IFE#PBF

OMO.#: OMO-LTC3779IFE-PBF

Switching Controllers 150V VIN & VOUT Sync 4-Switch Buck-Boost
NCP161ASN180T1G

Mfr.#: NCP161ASN180T1G

OMO.#: OMO-NCP161ASN180T1G

LDO Voltage Regulators LDO Reg, Ultra-Low Noise High PSRR 1.8V
PG164140

Mfr.#: PG164140

OMO.#: OMO-PG164140

Hardware Debuggers PICKit 4 MPLAB
STB37N60DM2AG

Mfr.#: STB37N60DM2AG

OMO.#: OMO-STB37N60DM2AG-STMICROELECTRONICS

MOSFET N-CH 600V 28A
TN5015H-6G-TR

Mfr.#: TN5015H-6G-TR

OMO.#: OMO-TN5015H-6G-TR-STMICROELECTRONICS

HIGH TEMPERATURE 50A SCRS
NCV2250SN2T1G

Mfr.#: NCV2250SN2T1G

OMO.#: OMO-NCV2250SN2T1G-ON-SEMICONDUCTOR

SINGLE PUSH-PULL OUTPUT C
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FDB075N15A-F085 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,15 $
4,15 $
10
3,52 $
35,20 $
100
3,05 $
305,00 $
250
2,90 $
725,00 $
500
2,60 $
1 300,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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