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NTMFS4839NHT3G

NTMFS4839NHT3G
Mfr. #:
NTMFS4839NHT3G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET NFET S08FL 30V 66A 5.5MO
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTMFS4839NHT3G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMFS4839NHT3G DatasheetNTMFS4839NHT3G Datasheet (P4-P6)NTMFS4839NHT3G Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-FL-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
24 A
Rds On - Drain-Source-Widerstand:
5.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
5.7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.05 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
5.8 mm
Marke:
ON Semiconductor
Abfallzeit:
5.3 ns, 3.4 ns
Produktart:
MOSFET
Anstiegszeit:
22.5 ns, 19.6 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns, 23.2 ns
Typische Einschaltverzögerungszeit:
13.4 ns, 8.1 ns
Tags
NTMFS4839NH, NTMFS4839, NTMFS483, NTMFS48, NTMFS4, NTMFS, NTMF, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
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15 A 30 V 0.0103 ohm N-CHANNEL Si POWER MOSFET
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Power Field-Effect Transistor, 15A I(D), 30V, 0.0103ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):4.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W
***nell
MOSFET, N-CH, 30V, 79A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 79A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 46W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 6.6 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 46
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET, N-CH, 30V, 82A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 82A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0041ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***emi
Single N−Channel Power MOSFET 30V, 69A, 4.0mΩ
***ical
Trans MOSFET N-CH 30V 31.6A 5-Pin(4+Tab) SO-FL T/R
***ark
TRENCH 6 30V NCH / REEL ROHS COMPLIANT: YES
***nell
MOSFET, N-CH, 30V, 69A, DFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 69A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power
***peria
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***ark
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***ical
Trans MOSFET N-CH 30V 70A Automotive 8-Pin LFPAK EP T/R
***nell
MOSFET, AEC-Q101, N-CH, 30V, SOT-1210; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 75W; Transistor Case Style: SOT-1210; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***emi
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***ser
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***et
Trans MOSFET N-CH 30V 16A 8-Pin SO-FL T/R
***r Electronics
Power Field-Effect Transistor, 10A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
NTMFS4839NHT3G
DISTI # NTMFS4839NHT3G-ND		ON SemiconductorMOSFET N-CH 30V 9.5A SO-8FL
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    NTMFS4839NHT3GON Semiconductor 
    RoHS: Not Compliant    		10000
    • 1000:$0.3200
    • 500:$0.3300
    • 100:$0.3500
    • 25:$0.3600
    • 1:$0.3900
    NTMFS4839NHT3G
    DISTI # 863-NTMFS4839NHT3G    		ON SemiconductorMOSFET NFET S08FL 30V 66A 5.5MO
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      NTMFS4845NT1G

      Mfr.#: NTMFS4845NT1G

      OMO.#: OMO-NTMFS4845NT1G

      		 MOSFET NFET SO8FL 30V TR
      NTMFS4852NT1G

      Mfr.#: NTMFS4852NT1G

      OMO.#: OMO-NTMFS4852NT1G

      		 MOSFET NFET SO8FL 30V 155A 2.1MO
      NTMFS4852NT3G

      Mfr.#: NTMFS4852NT3G

      OMO.#: OMO-NTMFS4852NT3G

      		 MOSFET NFET SO8FL 30V 155A 2.1MO
      NTMFS4821NT1G

      Mfr.#: NTMFS4821NT1G

      OMO.#: OMO-NTMFS4821NT1G-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 8.8A SO-8FL
      NTMFS4823N

      Mfr.#: NTMFS4823N

      OMO.#: OMO-NTMFS4823N-1190

      		 Neu und Original
      NTMFS4835NT1G , SMP1322-

      Mfr.#: NTMFS4835NT1G , SMP1322-

      OMO.#: OMO-NTMFS4835NT1G-SMP1322--1190

      		 Neu und Original
      NTMFS4835NT1GSO-8FL

      Mfr.#: NTMFS4835NT1GSO-8FL

      OMO.#: OMO-NTMFS4835NT1GSO-8FL-1190

      		 Neu und Original
      NTMFS4837NT1G

      Mfr.#: NTMFS4837NT1G

      OMO.#: OMO-NTMFS4837NT1G-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 10A SO-8FL
      NTMFS4899N

      Mfr.#: NTMFS4899N

      OMO.#: OMO-NTMFS4899N-1190

      		 Neu und Original
      NTMFS4826NET1G

      Mfr.#: NTMFS4826NET1G

      OMO.#: OMO-NTMFS4826NET1G-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 66A SO-8FL
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von NTMFS4839NHT3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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