IRF8910GTRPBF

Mfr. #:: IRF8910GTRPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET MOSFT DUAL NCh 20V 10A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF8910GTRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF8910GTRPBF Datasheet IRF8910GTRPBF Datasheet (P4-P6)IRF8910GTRPBF Datasheet (P7-P9)IRF8910GTRPBF Datasheet (P10)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 10 A

Rds On - Drain-Source-Widerstand:: 13.4 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.55 V

Qg - Gate-Ladung:: 11 nC

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2 W

Aufbau:: Dual

Verpackung:: Spule

Höhe:: 1.75 mm

Länge:: 4.9 mm

Transistortyp:: 2 N-Channel

Breite:: 3.9 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 24 S

Abfallzeit:: 4.1 ns

Produktart:: MOSFET

Anstiegszeit:: 10 ns

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001575420

Gewichtseinheit:: 0.017870 oz

Tags: IRF8910, IRF891, IRF89, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8910GTRPBF Beschreibung

***et: Trans MOSFET N-CH 20V 10A 8-Pin SOIC T/R

***ineon SCT: Halogen Free and Lead Free 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: DUAL N CH MOSFET, 20V, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):10.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.55V ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRF8910PBF Dual N-channel MOSFET Transistor; 10 A; 20 V; 8-Pin SOIC

***Yang: Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes

***ure Electronics: Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET

***ment14 APAC: N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8

***ponent Sense: Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC

***hard Electronics: ON SEMICONDUCTOR - FDS6898A - DUAL N CHANNEL MOSFET, 20V, SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

***Yang: Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel

***enic: 20V 11A 14m´Î@4.5V11A 2.5W 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Source Voltage Vds:-20V; On Resistance

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

***nell: MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

***enic: 20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF8910GTRPBF DISTI # IRF8910GTRPBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF8910GTRPBF DISTI # IRF8910GTRPBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF8910GTRPBF DISTI # IRF8910GTRPBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF8910GTRPBF DISTI # 70019662	Infineon Technologies AG	MOSFET,DUAL N-CHANNEL,20V,10A,SO-8,HALOGEN-FREE RoHS: Compliant	0	4000:$1.0600 8000:$1.0390 20000:$1.0070 40000:$0.9650 100000:$0.9010
IRF8910GTRPBF DISTI # 942-IRF8910GTRPBF	Infineon Technologies AG	MOSFET MOSFT DUAL NCh 20V 10A RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: 93LC76CT-I/SN OMO.#: OMO-93LC76CT-I-SN	EEPROM 516x8 Or 1024x8
	Mfr.#: 2N5322 OMO.#: OMO-2N5322	Bipolar Transistors - BJT 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W
	Mfr.#: PIMC31,115 OMO.#: OMO-PIMC31-115	Bipolar Transistors - Pre-Biased DOUBLE RESISTOR EQUIPPED TRANSISTOR
	Mfr.#: SQM200N04-1m1L_GE3 OMO.#: OMO-SQM200N04-1M1L-GE3	MOSFET 40V 200A, 375W AEC-Q101 Qualified
	Mfr.#: PIC18F46K22-I/MV OMO.#: OMO-PIC18F46K22-I-MV	8-bit Microcontrollers - MCU 64KB 3968b RAM 8bit familynanoWatt XLP
	Mfr.#: 3000 OMO.#: OMO-3000	Development Boards & Kits - AVR Circuit Playground
	Mfr.#: ERJ-3GEYJ183V OMO.#: OMO-ERJ-3GEYJ183V	Thick Film Resistors - SMD 0603 18Kohms 5% AEC-Q200
	Mfr.#: R76UW3100SE30K OMO.#: OMO-R76UW3100SE30K	Film Capacitors 2000Volts 0.1uF 105deg C 10%
	Mfr.#: R76UW3100SE30K OMO.#: OMO-R76UW3100SE30K-KEMET	Film Capacitors 2000Volts 0.1uF 105deg C 10%
	Mfr.#: 261G3-LPBK OMO.#: OMO-261G3-LPBK-673	Heavy Duty Power Connectors PP45 LOOSE CONT #10-14 AWG

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von IRF8910GTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

IRF8910 9
IRF891 16
IRF89 17
IRF8 314
IRF 8615

Neueste Produkte

VQ500 Series Combustible Hydrocarbon Gas Sensors

Amphenol SGX Sensortech's VQ500 series is a catalytic combustible gas sensor used to sense hydrocarbon gasses like methane.
Compare IRF8910GTRPBF

IRF8910 vs IRF8910GTRPBF vs IRF8910PBF
DOP-100 Series HMI

Delta’s DOP-100 series human machine interface is equipped with more than one COM port and an Ethernet port and features a multilingual input function.
ASDA-B2 Series AC Servo Drive and Motor

Delta's ASDA-B2 series servo motors and drives meet the requirements for general-purpose machine control applications.
AS Series Compact Modular Mid-Range PLC

Delta IA’s AS series is a high-performance multi-purpose controller designed for various automated equipment.
IR1 Series Single Gas Sensors

Amphenol SGX Sensortech's IR1 series sensors monitor gas levels in general safety applications requiring a flameproof enclosure and where the sensor size is restricted.

More Newest Products

IRF8910GTRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes