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BSC093N04LSGATMA1

BSC093N04LSGATMA1
Mfr. #:
BSC093N04LSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 40V 49A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC093N04LSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC093N04LSGATMA1 DatasheetBSC093N04LSGATMA1 Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Einzeln
Serie
OptiMOS
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
BSC093N04LS BSC093N04LSGXT G SP000387929
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
8-PowerTDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PG-TDSON-8
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
35W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
40V
Eingangskapazität-Ciss-Vds
1900pF @ 20V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
13A (Ta), 49A (Tc)
Rds-On-Max-Id-Vgs
9.3 mOhm @ 40A, 10V
Vgs-th-Max-Id
2V @ 14μA
Gate-Lade-Qg-Vgs
24nC @ 10V
Pd-Verlustleistung
35 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
2.8 ns
Anstiegszeit
2.4 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
49 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V
Rds-On-Drain-Source-Widerstand
9.3 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
16 ns
Typische-Einschaltverzögerungszeit
3.6 ns
Qg-Gate-Ladung
18 nC
Vorwärts-Transkonduktanz-Min
67 S
Kanal-Modus
Erweiterung
Tags
BSC093N04LSGA, BSC093N04LSG, BSC093N0, BSC093, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3323
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4057
  • 500:$0.5071
  • 100:$0.6846
  • 10:$0.8870
  • 1:$1.0100
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4057
  • 500:$0.5071
  • 100:$0.6846
  • 10:$0.8870
  • 1:$1.0100
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC093N04LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2569
  • 10000:$0.2479
  • 20000:$0.2389
  • 30000:$0.2309
  • 50000:$0.2269
BSC093N04LSGATMA1.
DISTI # 27AC1075		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:35W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.2570
  • 10000:$0.2480
  • 20000:$0.2390
  • 30000:$0.2310
  • 50000:$0.2270
BSC093N04LSGATMA1
DISTI # 726-BSC093N04LSGATMA		Infineon Technologies AGMOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
RoHS: Compliant		5260
  • 1:$0.8400
  • 10:$0.6940
  • 100:$0.4480
  • 1000:$0.3590
BSC093N04LS G
DISTI # 726-BSC093N04LSG		Infineon Technologies AGMOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.8400
  • 10:$0.6940
  • 100:$0.4480
  • 1000:$0.3590
BSC093N04LSGATMA1
DISTI # 7528164P		Infineon Technologies AGMOSFET N-CHANNEL 40V 13A OPTIMOS3 TDSON8, RL4850
  • 50:£0.4380
  • 250:£0.2820
  • 1250:£0.2240
  • 2500:£0.2200
BSC093N04LSGATMA1
DISTI # 1775460		Infineon Technologies AGMOSFET, N CH, 49A, 40V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.3400
  • 10:$1.1100
  • 100:$0.7090
  • 1000:$0.5690
  • 5000:$0.5010
BSC093N04LSGATMA1
DISTI # 1775460		Infineon Technologies AGMOSFET, N CH, 49A, 40V, PG-TDSON-8
RoHS: Compliant		0
  • 5:£0.5020
  • 25:£0.4730
  • 100:£0.3400
Bild Teil # Beschreibung
BSC093N04LS G

Mfr.#: BSC093N04LS G

OMO.#: OMO-BSC093N04LS-G

 MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
BSC093N04LS

Mfr.#: BSC093N04LS

OMO.#: OMO-BSC093N04LS-1190

 Neu und Original
BSC093N04LS G

Mfr.#: BSC093N04LS G

OMO.#: OMO-BSC093N04LS-G-1190

 Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G)
BSC093N04LSG

Mfr.#: BSC093N04LSG

OMO.#: OMO-BSC093N04LSG-1190

 40V,49A,N Channel Power MOSFET
BSC093N04LSGATMA1

Mfr.#: BSC093N04LSGATMA1

OMO.#: OMO-BSC093N04LSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 49A TDSON-8
BSC093N04LSGATMA1 , TDZ

Mfr.#: BSC093N04LSGATMA1 , TDZ

OMO.#: OMO-BSC093N04LSGATMA1-TDZ-1190

 Neu und Original
BSC093N04LSGATMA1-CUT TAPE

Mfr.#: BSC093N04LSGATMA1-CUT TAPE

OMO.#: OMO-BSC093N04LSGATMA1-CUT-TAPE-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von BSC093N04LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,34 $
0,34 $
10
0,32 $
3,23 $
100
0,31 $
30,63 $
500
0,29 $
144,65 $
1000
0,27 $
272,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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