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IRLR8721PBF

IRLR8721PBF
Mfr. #:
IRLR8721PBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLR8721PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR8721PBF DatasheetIRLR8721PBF Datasheet (P4-P6)IRLR8721PBF Datasheet (P7-P9)IRLR8721PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Internationaler Gleichrichter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Rohr
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
65 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
65 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
11.8 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
8.5 nC
Tags
IRLR8721, IRLR872, IRLR87, IRLR8, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 65A, 8.4 MOHM, 8.5 NC QG, D-PAK, Pb-Free
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:65W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.5nC; Current Id Max:65A; Package / Case:DPAK; Power Dissipation Pd:65W; Power Dissipation Pd:65W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 8.4 mOhm 8.5 nC HEXFET® Power Mosfet - DPAK
***(Formerly Allied Electronics)
MOSFET, 30V, 65A, 8.4 MOHM, 8.5 NC QG, LOGIC LEVEL, D-PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
***ure Electronics
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***ark
Transistor,mosfet,n-Channel,30V V(Br)Dss,15A I(D),to-252Aa Rohs Compliant: Yes
***emi
PowerTrench® MOSFET, N-Channel, 30V, 73A, 8.2mΩ
***r Electronics
Power Field-Effect Transistor, 15A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***Yang
N-Channel 30V 75A (Ta) 71W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
***i-Key
MOSFET N-CH 30V 75A D-PAK
***ser
MOSFETs 30V N-Ch PowerTrench
***S
French Electronic Distributor since 1988
***el Nordic
Contact for details
***Yang
POWER MOSFET 25V 70A SINGLE N-CHANNEL - Tape and Reel
***or
MOSFET N-CH 25V 11.2A/73A DPAK
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:13.6A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):6.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRLR8721PBF
DISTI # IRLR8721PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 65A DPAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLR8721PBF
    DISTI # 70018007    		Infineon Technologies AGMOSFET,N Ch.,30V,65A,8.4 MOHM,8.5 NC QG,D-PAK,Pb-Free
    RoHS: Compliant    		0
    • 900:$1.1600
    • 1800:$1.1370
    • 4500:$1.1020
    • 9000:$1.0560
    • 22500:$0.9860
    IRLR8721PBFInfineon Technologies AGPower Field-Effect Transistor, 65A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		19
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    IRLR8721PBF
    DISTI # 942-IRLR8721PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC
    RoHS: Compliant    		1
    • 1:$1.1600
    • 10:$0.5870
    • 100:$0.4940
    • 500:$0.4670
    • 1000:$0.4380
    • 2500:$0.4020
    • 10000:$0.3830
    IRLR8721PBF  2034
      IRLR8721PBF
      DISTI # 1551907      		Infineon Technologies AGMOSFET, N D-PAK
      RoHS: Compliant      		0
      • 1:£0.6070
      • 25:£0.5120
      • 100:£0.3880
      • 250:£0.3460
      • 1000:£0.3180
      IRLR8721PBF
      DISTI # 1551907      		Infineon Technologies AGMOSFET, N D-PAK
      RoHS: Compliant      		0
      • 1:$1.8400
      • 10:$0.9300
      • 100:$0.7820
      • 500:$0.7400
      • 1000:$0.6930
      • 2500:$0.6370
      • 10000:$0.6060
      • 25000:$0.5860
      Bild Teil # Beschreibung
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      Mfr.#: IRLR8103VPBF

      OMO.#: OMO-IRLR8103VPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 91A DPAK
      IRLR8103VT

      Mfr.#: IRLR8103VT

      OMO.#: OMO-IRLR8103VT-1190

      		 Neu und Original
      IRLR8203TRPBF,LR8203,IRL

      Mfr.#: IRLR8203TRPBF,LR8203,IRL

      OMO.#: OMO-IRLR8203TRPBF-LR8203-IRL-1190

      		 Neu und Original
      IRLR8726

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      OMO.#: OMO-IRLR8726-1190

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      IRLR8729PBF-1

      Mfr.#: IRLR8729PBF-1

      OMO.#: OMO-IRLR8729PBF-1-1190

      		 Neu und Original
      IRLR8259TRPBF-CUT TAPE

      Mfr.#: IRLR8259TRPBF-CUT TAPE

      OMO.#: OMO-IRLR8259TRPBF-CUT-TAPE-1190

      		 Neu und Original
      IRLR8103TR

      Mfr.#: IRLR8103TR

      OMO.#: OMO-IRLR8103TR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 89A DPAK
      IRLR8113TR

      Mfr.#: IRLR8113TR

      OMO.#: OMO-IRLR8113TR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 94A DPAK
      IRLR8721PBF

      Mfr.#: IRLR8721PBF

      OMO.#: OMO-IRLR8721PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von IRLR8721PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,49 $
      0,49 $
      10
      0,47 $
      4,70 $
      100
      0,45 $
      44,54 $
      500
      0,42 $
      210,30 $
      1000
      0,40 $
      395,90 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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