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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FDD2612 DISTI # FDD2612-ND | ON Semiconductor | MOSFET N-CH 200V 4.9A D-PAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FDD2612 DISTI # 512-FDD2612 | ON Semiconductor | MOSFET 200V NCh PowerTrench RoHS: Compliant | 0 | |
| FDD2612 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.9A I(D), 200V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 2261 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FDD9510L-F085 OMO.#: OMO-FDD9510L-F085 |
MOSFET 40V P-Chnl Power Trench Mosfet |
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Mfr.#: FDD16AN08A0 OMO.#: OMO-FDD16AN08A0 |
MOSFET 75V 50a .16Ohms/VGS=1V |
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Mfr.#: FDD6778A OMO.#: OMO-FDD6778A |
MOSFET 25V 10A N-Channel PowerTrench |
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Mfr.#: FDD2612-NL OMO.#: OMO-FDD2612-NL-1190 |
Neu und Original |
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Mfr.#: FDD5N50FTM OMO.#: OMO-FDD5N50FTM-1190 |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: FDD5N50UTM OMO.#: OMO-FDD5N50UTM-1190 |
- Bulk (Alt: FDD5N50UTM) |
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Mfr.#: FDD6672A |
MOSFET N-CH 30V 65A D-PAK |
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Mfr.#: FDD7N20 OMO.#: OMO-FDD7N20-1190 |
POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA |
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Mfr.#: FDD8874-NLJIA OMO.#: OMO-FDD8874-NLJIA-1190 |
Neu und Original |
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Mfr.#: FDD1-17251EBLW32-L56 |
FAN AXIAL 172X51MM 48VDC WIRE |