1SS307E,L3F

1SS307E,L3F
Mfr. #:
1SS307E,L3F
Hersteller:
Toshiba
Beschreibung:
Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
1SS307E,L3F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Toshiba Halbleiter und Speicher
Produktkategorie
Dioden, Gleichrichter - Einzeln
Serie
Automotive, AEC-Q101
Verpackung
Digi-ReelR Alternative Verpackung
Paket-Koffer
SC-79, SOD-523
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
SC-79
Geschwindigkeit
Kleinsignal =
Dioden-Typ
Standard
Strom-Rückwärts-Leckage-Vr
10nA @ 80V
Spannung-Vorwärts-Uf-Max-If
1.3V @ 100mA
Spannung-DC-Rückwärts-Vr-Max
80V
Strom-Durchschnitt-Gleichgerichtet-Io
100mA
Reverse-Recovery-Time-trr
-
Kapazität-Vr-F
6pF @ 0V, 1MHz
Betriebstemperatur-Kreuzung
150°C (Max)
Tags
1SS307E, 1SS307, 1SS30, 1SS3, 1SS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Diode Switching 85V 0.1A 2-Pin SOD-523
***i-Key
DIODE GEN PURP 80V 100MA SC79
***ical
Switching Diodes Silicon Epitaxial Planar
***
SWITCHING DIODE 0.1A VR:80V
Teil # Mfg. Beschreibung Aktie Preis
1SS307E,L3F
DISTI # V72:2272_14140218
Toshiba America Electronic ComponentsSWITCHING DIODE SINGLE LOW LEA965
  • 500:$0.1008
  • 250:$0.1120
  • 100:$0.1245
  • 25:$0.2377
  • 10:$0.2641
  • 1:$0.2665
1SS307E,L3F
DISTI # 1SS307EL3FTR-ND
Toshiba America Electronic ComponentsDIODE GEN PURP 80V 100MA SC79
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
8000In Stock
  • 200000:$0.0182
  • 56000:$0.0218
  • 24000:$0.0246
  • 16000:$0.0273
  • 8000:$0.0314
1SS307E,L3F
DISTI # 1SS307EL3FCT-ND
Toshiba America Electronic ComponentsDIODE GEN PURP 80V 100MA SC79
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8000In Stock
  • 1000:$0.0422
  • 500:$0.0619
  • 100:$0.1265
  • 10:$0.1930
  • 1:$0.2100
1SS307E,L3F
DISTI # 1SS307EL3FDKR-ND
Toshiba America Electronic ComponentsDIODE GEN PURP 80V 100MA SC79
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8000In Stock
  • 1000:$0.0422
  • 500:$0.0619
  • 100:$0.1265
  • 10:$0.1930
  • 1:$0.2100
1SS307E,L3F
DISTI # 25805863
Toshiba America Electronic ComponentsSWITCHING DIODE SINGLE LOW LEA965
  • 500:$0.1008
  • 382:$0.1120
1SS307EL3F
DISTI # 1SS307E,L3F
Toshiba America Electronic ComponentsSWITCHING DIODE SINGLE LOW LEAKAGE CURRENT ESC, ID: 0.1A, VR: 80V - Tape and Reel (Alt: 1SS307E,L3F)
RoHS: Compliant
Min Qty: 8000
Container: Reel
Americas - 0
  • 8000:$0.0204
  • 16000:$0.0192
  • 32000:$0.0181
  • 48000:$0.0171
  • 80000:$0.0167
1SS307E,L3F
DISTI # 757-1SS307EL3F
Toshiba America Electronic ComponentsDiodes - General Purpose, Power, Switching Switching diode SNG Low leak current
RoHS: Compliant
5
  • 1:$0.4700
  • 10:$0.2780
  • 100:$0.1310
  • 1000:$0.1010
  • 2500:$0.0830
  • 8000:$0.0310
  • 24000:$0.0240
  • 48000:$0.0220
  • 96000:$0.0180
1SS307E,L3F
DISTI # C1S751201128960
Toshiba America Electronic ComponentsOther semiconductors965
  • 250:$0.1120
  • 100:$0.1245
1SS307E,L3FToshiba America Electronic ComponentsDiodes - General Purpose, Power, Switching Switching diode SNG Low leak current
RoHS: Compliant
Americas -
    1SS307EL3FToshiba America Electronic ComponentsDiodes - General Purpose, Power, Switching SWITCHING DIODE 0.1A VR:80V
    RoHS: Compliant
    Americas -
      Bild Teil # Beschreibung
      1SS307E,L3F

      Mfr.#: 1SS307E,L3F

      OMO.#: OMO-1SS307E-L3F

      Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
      1SS301LFCT-ND

      Mfr.#: 1SS301LFCT-ND

      OMO.#: OMO-1SS301LFCT-ND-1190

      Neu und Original
      1SS301SULFDKR-ND

      Mfr.#: 1SS301SULFDKR-ND

      OMO.#: OMO-1SS301SULFDKR-ND-1190

      Neu und Original
      1SS302TE85LFDKR-ND

      Mfr.#: 1SS302TE85LFDKR-ND

      OMO.#: OMO-1SS302TE85LFDKR-ND-1190

      Neu und Original
      1SS302TE85LFTR-ND

      Mfr.#: 1SS302TE85LFTR-ND

      OMO.#: OMO-1SS302TE85LFTR-ND-1190

      Neu und Original
      1SS301LF(B

      Mfr.#: 1SS301LF(B

      OMO.#: OMO-1SS301LF-B-1190

      Diode Switching 85V 0.1A 3-Pin SC-70 (Alt: 1SS301,LF(B)
      1SS300(T5L,F,T)

      Mfr.#: 1SS300(T5L,F,T)

      OMO.#: OMO-1SS300-T5L-F-T--1190

      Neu und Original
      1SS301LF

      Mfr.#: 1SS301LF

      OMO.#: OMO-1SS301LF-37

      Diodes - General Purpose, Power, Switching USM M8 IFM=300MA
      1SS302-T

      Mfr.#: 1SS302-T

      OMO.#: OMO-1SS302-T-1190

      Neu und Original
      1SS301SU,LF

      Mfr.#: 1SS301SU,LF

      OMO.#: OMO-1SS301SU-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR

      Rectifiers High Speed 0.9V VF 85Vrm 80Vr 300mA
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von 1SS307E,L3F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,02 $
      0,02 $
      10
      0,02 $
      0,21 $
      100
      0,02 $
      2,04 $
      500
      0,02 $
      9,65 $
      1000
      0,02 $
      18,10 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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