FDMS0302S

FDMS0302S
Mfr. #:
FDMS0302S
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET PT8 30V/20V NCH ERTREN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS0302S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
1.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
78 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench-SyncFET
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
FDMS0302S
Transistortyp:
2 N-channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
181 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
43 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.002402 oz
Tags
FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 30V 29A 8-Pin PQFN EP T/R
***r Electronics
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0302S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
*** Stop Electro
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
***nell
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
N-Channel 30V 31A (Ta), 49A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
***ical
Trans MOSFET N-CH Si 30V 31A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0300S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 60 A 83 W 1.8 mOhm Power Mosfet - PowerPak-SO-8
***ment14 APAC
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 83W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
***nell
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Teil # Mfg. Beschreibung Aktie Preis
FDMS0302S
DISTI # 31295237
ON SemiconductorPT8 30V/20V NCH POWERTRENCH SY15000
  • 3000:$0.4514
FDMS0302S
DISTI # FDMS0302SCT-ND
ON SemiconductorMOSFET N-CH 30V 29A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS0302S
    DISTI # FDMS0302SDKR-ND
    ON SemiconductorMOSFET N-CH 30V 29A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS0302S
      DISTI # FDMS0302STR-ND
      ON SemiconductorMOSFET N-CH 30V 29A
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.5478
      FDMS0302S
      DISTI # FDMS0302S
      ON SemiconductorTrans MOSFET N-CH 30V 29A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0302S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.4639
      • 6000:$0.4609
      • 12000:$0.4559
      • 18000:$0.4499
      • 30000:$0.4389
      FDMS0302S
      DISTI # 68X0367
      ON SemiconductorPT8 30V/20V NCH ERTREN / REEL0
      • 1:$0.7120
      FDMS0302SFairchild Semiconductor Corporation 
      RoHS: Not Compliant
      66000
      • 1000:$0.5300
      • 500:$0.5500
      • 100:$0.5800
      • 25:$0.6000
      • 1:$0.6500
      FDMS0302S
      DISTI # 512-FDMS0302S
      ON SemiconductorMOSFET PT8 30V/20V NCH ERTREN
      RoHS: Compliant
      2834
      • 1:$1.1700
      • 10:$0.9960
      • 100:$0.7650
      • 500:$0.6760
      • 1000:$0.5340
      • 3000:$0.4740
      • 9000:$0.4560
      Bild Teil # Beschreibung
      LT1720IS8#PBF

      Mfr.#: LT1720IS8#PBF

      OMO.#: OMO-LT1720IS8-PBF

      Analog Comparators Dual 3V/5V Hi Speed Comparator
      LTC1422IS8#PBF

      Mfr.#: LTC1422IS8#PBF

      OMO.#: OMO-LTC1422IS8-PBF

      Hot Swap Voltage Controllers 2.7V to 12V, 8 Pin Hot Swap Controller
      XAL1010-103MEB

      Mfr.#: XAL1010-103MEB

      OMO.#: OMO-XAL1010-103MEB-1190

      Fixed Inductors 10uH 20% 15.5A 14.75mOhms AEC-Q200
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von FDMS0302S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,17 $
      1,17 $
      10
      1,00 $
      9,96 $
      100
      0,76 $
      76,50 $
      500
      0,68 $
      338,00 $
      1000
      0,53 $
      534,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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