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IRL1104PBF

IRL1104PBF
Mfr. #:
IRL1104PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL1104PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL1104PBF DatasheetIRL1104PBF Datasheet (P4-P6)IRL1104PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
104 A
Rds On - Drain-Source-Widerstand:
12 mOhms
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
45.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
167 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
4.4 mm
Marke:
Infineon / IR
Abfallzeit:
64 ns
Produktart:
MOSFET
Anstiegszeit:
257 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
32 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
SP001552524
Gewichtseinheit:
0.211644 oz
Tags
IRL110, IRL11, IRL1, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***(Formerly Allied Electronics)
MOSFET; 40V; 104A; 8 MOHM; 45.3 NC QG; LOGIC LEVEL; TO-220AB
***p One Stop Global
Trans MOSFET N-CH Si 40V 104A 3-Pin(3+Tab) TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W
***ment14 APAC
MOSFET, N, 40V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:167W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:416A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***ernational Rectifier
Automotive Q101 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 30V 75A TO-220AB
***Yang
Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***nell
MOSFET, N-CH, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:180W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***icroelectronics
N-channel 40 V, 0.005 Ohm, 80 A STripFET(TM) II Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et Europe
Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220AB
***ponent Stockers USA
70 A 40 V 0.0071 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***hard Electronics
Power Field-Effect Transistor, 70A I(D), 40V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET, N CH, 40V, 75A, TO220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Power Dissipation Pd:140W; Voltage Vgs Max:20V
***ark
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,75A I(D),TO-220AB RoHS Compliant: Yes
***-Wing Technology
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 75A Tc 150W Tc 50V -65C~175C TJ
***eco
50V N-CH. FET, 13 MO, TO220
***S
French Electronic Distributor since 1988
***ser
MOSFETs N-Channel FET Enhancement Mode
***i-Key
MOSFET N-CH 50V 75A TO-220AB
***ser
MOSFETs N-Channel FET Enhancement Mode
***ter Electronics
50V75ANCH LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANS
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):0.015ohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:3-TO-220; Drain-Source Breakdown Voltage:50V RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRL1104PBF
DISTI # IRL1104PBF-ND		Infineon Technologies AGMOSFET N-CH 40V 104A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube		Limited Supply - Call
    IRL1104PBF
    DISTI # 70018517    		Infineon Technologies AGMOSFET,40V,104A,8 MOHM,45.3 NC QG,LOGIC LEVEL,TO-220AB
    RoHS: Compliant    		0
    • 3000:$1.1800
    IRL1104PBF
    DISTI # 942-IRL1104PBF    		Infineon Technologies AGMOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
    RoHS: Compliant    		0
      IRL1104PBFInternational Rectifier 1138
        Bild Teil # Beschreibung
        IRL1104STRLPBF

        Mfr.#: IRL1104STRLPBF

        OMO.#: OMO-IRL1104STRLPBF

        		 MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
        IRL1104LPBF

        Mfr.#: IRL1104LPBF

        OMO.#: OMO-IRL1104LPBF

        		 MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
        IRL1104LPBF

        Mfr.#: IRL1104LPBF

        OMO.#: OMO-IRL1104LPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 104A TO-262
        IRL1104L

        Mfr.#: IRL1104L

        OMO.#: OMO-IRL1104L-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 104A TO-262
        IRL1104STRL

        Mfr.#: IRL1104STRL

        OMO.#: OMO-IRL1104STRL-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 104A D2PAK
        IRL1104

        Mfr.#: IRL1104

        OMO.#: OMO-IRL1104-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 104A TO-220AB
        IRL1104PBF

        Mfr.#: IRL1104PBF

        OMO.#: OMO-IRL1104PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 104A TO-220AB
        IRL1104S

        Mfr.#: IRL1104S

        OMO.#: OMO-IRL1104S-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 104A D2PAK
        IRL1104STRLPBF

        Mfr.#: IRL1104STRLPBF

        OMO.#: OMO-IRL1104STRLPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 104A D2PAK
        IRL112S

        Mfr.#: IRL112S

        OMO.#: OMO-IRL112S-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von IRL1104PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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