OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXXK110N65B4H1

IXXK110N65B4H1
Mfr. #:
IXXK110N65B4H1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXK110N65B4H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXK110N65B4H1 DatasheetIXXK110N65B4H1 Datasheet (P4-P6)IXXK110N65B4H1 Datasheet (P7)
ECAD Model:
Mehr Informationen:
IXXK110N65B4H1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-264-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.75 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
240 A
Pd - Verlustleistung:
880 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXXK110N65
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
110 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
25
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
0.373904 oz
Tags
IXXK1, IXXK, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) TO-264AA
***el Electronic
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
***i-Key
IGBT 650V 240A 880W TO264
***trelec
IGBT, 650V, 250A, TO-264
***ure Electronics
IGBT DISCRETE
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXK110N65B4H1
DISTI # IXXK110N65B4H1-ND		IXYS CorporationIGBT 650V 240A 880W TO264
RoHS: Compliant
Min Qty: 1
Container: Tube		80In Stock
  • 500:$7.9627
  • 250:$8.5118
  • 100:$9.3356
  • 25:$10.1592
  • 10:$10.9830
  • 1:$12.0800
IXXK110N65B4H1
DISTI # 747-IXXK110N65B4H1		IXYS CorporationIGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
RoHS: Compliant		73
  • 1:$11.5100
  • 10:$10.4600
  • 25:$9.6800
  • 50:$9.1200
  • 100:$8.8900
  • 250:$8.1100
  • 500:$7.5800
IXXK110N65B4H1
DISTI # 1258051		IXYS CorporationIGBT 110A 650V TO264, EA351
  • 1:£8.5100
  • 2:£7.0900
  • 5:£6.3800
  • 10:£5.9500
  • 25:£5.8000
Bild Teil # Beschreibung
FGH75T65SQD-F155

Mfr.#: FGH75T65SQD-F155

OMO.#: OMO-FGH75T65SQD-F155

 IGBT Transistors 650V FS4 Trench IGBT
APT50GN120L2DQ2G

Mfr.#: APT50GN120L2DQ2G

OMO.#: OMO-APT50GN120L2DQ2G

 IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
FQA62N25C

Mfr.#: FQA62N25C

OMO.#: OMO-FQA62N25C

 MOSFET 250V N-Channel Adv Q-FET C-Series
SC189CSKTRT

Mfr.#: SC189CSKTRT

OMO.#: OMO-SC189CSKTRT

 Switching Voltage Regulators 2.5MHz-1.5A SYNC STEP DOWN REG
ECS-3225S33-240-FN-TR

Mfr.#: ECS-3225S33-240-FN-TR

OMO.#: OMO-ECS-3225S33-240-FN-TR

 Standard Clock Oscillators 24MHz 3.3V 10ppm -40C +85C
APT50GN120L2DQ2G

Mfr.#: APT50GN120L2DQ2G

OMO.#: OMO-APT50GN120L2DQ2G-MICROSEMI

 IGBT Transistors
FQA62N25C

Mfr.#: FQA62N25C

OMO.#: OMO-FQA62N25C-ON-SEMICONDUCTOR

 MOSFET N-CH 250V 62A TO-3P
SC189CSKTRT

Mfr.#: SC189CSKTRT

OMO.#: OMO-SC189CSKTRT-SEMTECH

 IC REG BUCK 1.2V 1.5A SOT23-5
C3216JB1H106K160AB

Mfr.#: C3216JB1H106K160AB

OMO.#: OMO-C3216JB1H106K160AB-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 10uF 50volts JB 10%
MGJ1D241509MPC-R7

Mfr.#: MGJ1D241509MPC-R7

OMO.#: OMO-MGJ1D241509MPC-R7-MURATA-POWER-SOLUTIONS

 DC/DC 1W TH 24-15/9V 5.2KV
Verfügbarkeit
Aktie:
280
Auf Bestellung:
2263
Menge eingeben:
Der aktuelle Preis von IXXK110N65B4H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,51 $
11,51 $
10
10,46 $
104,60 $
25
9,68 $
242,00 $
50
9,12 $
456,00 $
100
8,89 $
889,00 $
250
8,11 $
2 027,50 $
500
7,58 $
3 790,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top