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STGW30M65DF2

STGW30M65DF2
Mfr. #:
STGW30M65DF2
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW30M65DF2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW30M65DF2 Mehr Informationen STGW30M65DF2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.55 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
60 A
Pd - Verlustleistung:
258 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGW30M65DF2
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
IGBTs
Tags
STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 650V 30A 1,55V TO247-3 RoHSconf
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
***i-Key
TRENCH GATE FIELD-STOP IGBT M SE
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Teil # Mfg. Beschreibung Aktie Preis
STGW30M65DF2
DISTI # V99:2348_17623290		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		427
  • 250:$2.2420
  • 100:$2.3609
  • 10:$2.7260
  • 1:$3.5167
STGW30M65DF2
DISTI # 497-16485-5-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube		195In Stock
  • 2520:$1.7066
  • 510:$2.1247
  • 120:$2.4959
  • 30:$2.8800
  • 10:$3.0460
  • 1:$3.3900
STGW30M65DF2
DISTI # 25947923		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		427
  • 250:$2.1040
  • 100:$2.1980
  • 10:$2.4770
  • 4:$3.1009
STGW30M65DF2
DISTI # STGW30M65DF2		STMicroelectronicsN-channel STripFET > 30 V to 350 V (Alt: STGW30M65DF2)
RoHS: Compliant
Min Qty: 30		Europe - 600
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 30:€1.6900
  • 60:€1.6900
STGW30M65DF2
DISTI # STGW30M65DF2		STMicroelectronicsN-channel STripFET > 30 V to 350 V - Tape and Reel (Alt: STGW30M65DF2)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.6900
  • 10000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1000:$1.9900
STGW30M65DF2
DISTI # 84Y8611		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.5300
STGW30M65DF2.
DISTI # 30AC0855		STMicroelectronicsPTD HIGH VOLTAGE0
  • 6000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1:$1.9900
STGW30M65DF2
DISTI # 511-STGW30M65DF2		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
RoHS: Compliant		514
  • 1:$3.2200
  • 10:$2.7400
  • 100:$2.3700
  • 250:$2.2500
  • 500:$2.0200
  • 1000:$1.7000
  • 2500:$1.6200
  • 5000:$1.5600
Bild Teil # Beschreibung
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Mfr.#: STGIB20M60TS-L

OMO.#: OMO-STGIB20M60TS-L

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STGWA40H65DFB

Mfr.#: STGWA40H65DFB

OMO.#: OMO-STGWA40H65DFB

 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2

 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB

 IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
B32776T1275K000

Mfr.#: B32776T1275K000

OMO.#: OMO-B32776T1275K000

 Film Capacitors ALUM LYTIC RADIAL 6 800 UF 35 V
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB-STMICROELECTRONICS

 IGBT 600V 60A 260W TO247
STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2-STMICROELECTRONICS

 IGBT TRENCH 650V 40A TO247
STGIB20M60TS-L

Mfr.#: STGIB20M60TS-L

OMO.#: OMO-STGIB20M60TS-L-1190

 THREE-PHASE BRUSHLESS MOTORS
STGWA40H65DFB

Mfr.#: STGWA40H65DFB

OMO.#: OMO-STGWA40H65DFB-STMICROELECTRONICS

 IGBT TRENCH 650V 80A TO247
OPA189IDR

Mfr.#: OPA189IDR

OMO.#: OMO-OPA189IDR-TEXAS-INSTRUMENTS

 36V ZERO DRIFT OP-AMP
Verfügbarkeit
Aktie:
504
Auf Bestellung:
2487
Menge eingeben:
Der aktuelle Preis von STGW30M65DF2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,22 $
3,22 $
10
2,74 $
27,40 $
100
2,37 $
237,00 $
250
2,25 $
562,50 $
500
2,02 $
1 010,00 $
1000
1,70 $
1 700,00 $
2500
1,62 $
4 050,00 $
5000
1,56 $
7 800,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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