FQPF6N60C

FQPF6N60C
Mfr. #:
FQPF6N60C
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 600V 5.5A TO-220F
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQPF6N60C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FQPF6N60C, FQPF6N6, FQPF6N, FQPF6, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
MOSFET N-Channel 600V 5.5A TO220F
*** Source Electronics
MOSFET N-CH 600V 5.5A TO-220F
***ser
MOSFETs N-CH/600V/6A/QFET
***ark
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:5.5A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:5.5A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:22A; Power Dissipation:40W; Power, Pd:40W; Transistors, No. of:1; Voltage, Vds Max:600V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-220F; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:5.5A; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
FQPF6N60C
DISTI # FQPF6N60C-ND
ON SemiconductorMOSFET N-CH 600V 5.5A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FQPF6N60C
    DISTI # 512-FQPF6N60C
    ON SemiconductorMOSFET N-CH/600V/6A/QFET
    RoHS: Compliant
    0
      FQPF6N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      6057
      • 1000:$0.6500
      • 500:$0.6800
      • 100:$0.7100
      • 25:$0.7400
      • 1:$0.7900
      FQPF6N60CFairchild Semiconductor Corporation5.5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB30
      • 12:$1.8600
      • 3:$2.3250
      • 1:$2.7900
      FQPF6N60C
      DISTI # 1095093
      ON SemiconductorMOSFET, N, TO-220F
      RoHS: Compliant
      0
      • 250:$0.9730
      • 100:$1.1500
      • 25:$1.6000
      • 1:$1.9100
      Bild Teil # Beschreibung
      FQPF8N80C

      Mfr.#: FQPF8N80C

      OMO.#: OMO-FQPF8N80C

      MOSFET 800V N-Ch Q-FET advance C-Series
      FQPF9P25YDTU

      Mfr.#: FQPF9P25YDTU

      OMO.#: OMO-FQPF9P25YDTU

      MOSFET QF -250V 620MOHM TO220FYD
      FQPF19N20

      Mfr.#: FQPF19N20

      OMO.#: OMO-FQPF19N20

      MOSFET 200V N-Channel QFET
      FQPF1P50

      Mfr.#: FQPF1P50

      OMO.#: OMO-FQPF1P50

      MOSFET 500V P-Channel QFET
      FQPF18N20V2

      Mfr.#: FQPF18N20V2

      OMO.#: OMO-FQPF18N20V2

      MOSFET 200V N-Ch adv QFET V2 Series
      FQPF12P20XDTU

      Mfr.#: FQPF12P20XDTU

      OMO.#: OMO-FQPF12P20XDTU

      MOSFET 200V P-Channel QFET
      FQPF12N60CT

      Mfr.#: FQPF12N60CT

      OMO.#: OMO-FQPF12N60CT-ON-SEMICONDUCTOR

      MOSFET N-CH 600V 12A TO-220F
      FQPF13N06

      Mfr.#: FQPF13N06

      OMO.#: OMO-FQPF13N06-ON-SEMICONDUCTOR

      MOSFET N-CH 60V 9.4A TO-220F
      FQPF4N20

      Mfr.#: FQPF4N20

      OMO.#: OMO-FQPF4N20-ON-SEMICONDUCTOR

      MOSFET N-CH 200V 2.8A TO-220F
      FQPF7N80C/8N90C

      Mfr.#: FQPF7N80C/8N90C

      OMO.#: OMO-FQPF7N80C-8N90C-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von FQPF6N60C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,98 $
      0,98 $
      10
      0,93 $
      9,26 $
      100
      0,88 $
      87,75 $
      500
      0,83 $
      414,40 $
      1000
      0,78 $
      780,00 $
      Beginnen mit
      Top