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SUM60N06-15-E3

SUM60N06-15-E3
Mfr. #:
SUM60N06-15-E3
Hersteller:
Vishay Intertechnologies
Beschreibung:
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SUM60N06-15-E3)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SUM60N06-15-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SUM60N06, SUM60N0, SUM60N, SUM60, SUM6, SUM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 55 V 7.5 mOhm 95 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ical
Trans MOSFET N-CH Si 55V 94A 3-Pin(2+Tab) D2PAK Tube
***eco
IRF1010ZSPBF,MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, D2-PAK
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0058Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 64 A, 55 V, 14 Mohm, 10 V, 4 V
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; D2Pak; PD 130W; VGS +/-20V
***ure Electronics
Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***p One Stop Global
Trans MOSFET N-CH Si 55V 64A 3-Pin(2+Tab) D2PAK Tube
***el Electronic
Inductor Power Shielded Wirewound 22uH 20% 1MHz Ferrite 0.55A 0.822Ohm DCR 1210 Automotive T/R
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
*** Source Electronics
Trans MOSFET N-CH Si 40V 120A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 40V 75A D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***eco
Transistor MOSFET N Channel 40 Volt 120 Amp 3-Pin 2+ Tab D2pak
***(Formerly Allied Electronics)
MOSFET, N Ch., Automotive, 40V, 120A, 5.5 MOHM, 68 NC QG, D2-PAK, Pb-Free
***ure Electronics
Single N-Channel 75 V 5.5 mOhm 68 nC HEXFET® Power Mosfet - D2PAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 140 W
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:120mJ; Capacitance Ciss Typ:3000pF; Current Id Max:75A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:470A; Reverse Recovery Time trr Typ:23ns; SMD Marking:F4104; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ark
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
***ure Electronics
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***nell
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***emi
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
***ical
Trans MOSFET N-CH 60V 17A Automotive 5-Pin(4+Tab) SO-FL T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 60V 17A, 71A 3.6W 61W Surface Mount 5-DFN (5x6) MOSFET
***enic
60V 17A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel DFN-5 MOSFETs ROHS
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 61W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
PowerTrench® MOSFET, N-Channel, 40V, 50A, 8.7mΩ
***ure Electronics
N-Channel 40 V 50 A 8.7 mOhm Surface Mount PowerTrench Mosfet TO-252-3
***r Electronics
Power Field-Effect Transistor, 70A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Application Code:GP; Current Id Max:70A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Package / Case:DPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:85A; Reverse Recovery Time trr Typ:39ns; SMD Marking:FDD8445; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Teil # Mfg. Beschreibung Aktie Preis
SUM60N06-15-E3
DISTI # SUM60N06-15-E3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SUM60N06-15-E3)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 4800:$1.2900
  • 8000:$1.2900
  • 1600:$1.3900
  • 3200:$1.3900
  • 800:$1.4900
Bild Teil # Beschreibung
SUM60N04-05T-E3

Mfr.#: SUM60N04-05T-E3

OMO.#: OMO-SUM60N04-05T-E3

 MOSFET 40V 60A 200W w/Sensing Diode
SUM60N02-3M9P-E3

Mfr.#: SUM60N02-3M9P-E3

OMO.#: OMO-SUM60N02-3M9P-E3

 MOSFET 20V 60A 120W 3.9mohm @ 10V
SUM60N04

Mfr.#: SUM60N04

OMO.#: OMO-SUM60N04-1190

 Neu und Original
SUM60N04-05C

Mfr.#: SUM60N04-05C

OMO.#: OMO-SUM60N04-05C-1190

 Neu und Original
SUM60N04-05LT

Mfr.#: SUM60N04-05LT

OMO.#: OMO-SUM60N04-05LT-1190

 MOSFET 40V 60A 200W w/Sensing Diode
SUM60N04-12L

Mfr.#: SUM60N04-12L

OMO.#: OMO-SUM60N04-12L-1190

 Neu und Original
SUM60N06-15

Mfr.#: SUM60N06-15

OMO.#: OMO-SUM60N06-15-1190

 MOSFET Transistor, N-Channel, TO-263AB
SUM60N06-15-E3

Mfr.#: SUM60N06-15-E3

OMO.#: OMO-SUM60N06-15-E3-1190

 Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SUM60N06-15-E3)
SUM60N08-07

Mfr.#: SUM60N08-07

OMO.#: OMO-SUM60N08-07-1190

 Neu und Original
SUM60N08-07T

Mfr.#: SUM60N08-07T

OMO.#: OMO-SUM60N08-07T-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von SUM60N06-15-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,94 $
1,94 $
10
1,84 $
18,38 $
100
1,74 $
174,15 $
500
1,64 $
822,40 $
1000
1,55 $
1 548,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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