BSZ058N03LSGATMA1

BSZ058N03LSGATMA1
Mfr. #:
BSZ058N03LSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ058N03LSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
4.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
30 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
45 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
36 S
Abfallzeit:
3.2 ns
Produktart:
MOSFET
Anstiegszeit:
3.6 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
4.6 ns
Teil # Aliase:
BSZ058N03LS BSZ58N3LSGXT G SP000307424
Tags
BSZ058N03LSG, BSZ058N03LS, BSZ058N03L, BSZ058N, BSZ058, BSZ05, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 50, N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ058N03LSGATMA1
***ure Electronics
Single N-Channel 30 V 5.8 mOhm 22 nC OptiMOS™ Power Mosfet - TSDSON-8
***p One Stop Global
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
***et Europe
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON T/R
***an P&S
30V,40A,N Channel Power MOSFET
***i-Key
MOSFET N-CH 30V 40A TSDSON-8
***ronik
N-CH 30V 40A 6mOhm S3O8
***ical
BSZ058N03LS G
***ark
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N; Current Id Max:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON-8; No. of Pins:8; Transistor Type:Power MOSFET
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:45W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
BSZ058N03LSGATMA1
DISTI # V72:2272_06390931
Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
RoHS: Compliant
3825
  • 3000:$0.3479
  • 1000:$0.3509
  • 500:$0.3623
  • 250:$0.4026
  • 100:$0.4473
  • 25:$0.6206
  • 10:$0.7585
  • 1:$0.9097
BSZ058N03LSGATMA1
DISTI # V36:1790_06390931
Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000:$0.2621
BSZ058N03LSGATMA1
DISTI # BSZ058N03LSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
20050In Stock
  • 1000:$0.3893
  • 500:$0.4867
  • 100:$0.6156
  • 10:$0.8030
  • 1:$0.9100
BSZ058N03LSGATMA1
DISTI # BSZ058N03LSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
20050In Stock
  • 1000:$0.3893
  • 500:$0.4867
  • 100:$0.6156
  • 10:$0.8030
  • 1:$0.9100
BSZ058N03LSGATMA1
DISTI # BSZ058N03LSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
15000In Stock
  • 25000:$0.2993
  • 10000:$0.3071
  • 5000:$0.3189
BSZ058N03LSGATMA1
DISTI # 33356084
Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
RoHS: Compliant
10000
  • 5000:$0.2378
BSZ058N03LSGATMA1
DISTI # 32716579
Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.4016
BSZ058N03LSGATMA1
DISTI # 30737655
Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
RoHS: Compliant
3825
  • 25:$0.9097
BSZ058N03LSGATMA1
DISTI # BSZ058N03LSGATMA1
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8 - Tape and Reel (Alt: BSZ058N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 10000
  • 50000:$0.2279
  • 30000:$0.2319
  • 20000:$0.2399
  • 10000:$0.2499
  • 5000:$0.2589
BSZ058N03LSGATMA1
DISTI # SP000307424
Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8 (Alt: SP000307424)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.2619
  • 30000:€0.2829
  • 20000:€0.3139
  • 10000:€0.3529
  • 5000:€0.4159
BSZ058N03LSGATMA1
DISTI # 726-BSZ058N03LSGATMA
Infineon Technologies AGMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant
25000
  • 1:$0.8400
  • 10:$0.6980
  • 100:$0.4500
  • 1000:$0.3600
  • 5000:$0.3040
  • 10000:$0.2930
  • 25000:$0.2820
BSZ058N03LS G
DISTI # 726-BSZ058N03LSG
Infineon Technologies AGMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant
17025
  • 1:$0.8400
  • 10:$0.6980
  • 100:$0.4500
  • 1000:$0.3600
  • 5000:$0.3040
  • 10000:$0.2930
  • 25000:$0.2820
BSZ058N03LSGATMA1Infineon Technologies AGSingle N-Channel 30 V 5.8 mOhm 22 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant
5000Reel
  • 5000:$0.2450
BSZ058N03LSGATMA1
DISTI # 8275215P
Infineon Technologies AGMOSFET N-CH 15A 30V OPTIMOS3 TSDSON8EP, RL65000
  • 2500:£0.2910
  • 1000:£0.3040
  • 250:£0.3700
BSZ058N03LSGATMA1
DISTI # 1775497
Infineon Technologies AGMOSFET, N CH, 40A, 30V, PG-TSDSON-8
RoHS: Compliant
0
  • 1000:$0.5540
  • 100:$0.6920
  • 10:$1.0800
  • 1:$1.3000
BSZ058N03LSGATMA1
DISTI # 1775497
Infineon Technologies AGMOSFET, N CH, 40A, 30V, PG-TSDSON-80
  • 500:£0.2970
  • 250:£0.3200
  • 100:£0.3430
  • 10:£0.5850
  • 1:£0.7330
BSZ058N03LSGATMA1
DISTI # XSFP00000153821
Infineon Technologies AG 
RoHS: Compliant
10000 in Stock0 on Order
  • 10000:$0.3267
  • 5000:$0.3500
Bild Teil # Beschreibung
BSZ058N03MSGXT

Mfr.#: BSZ058N03MSGXT

OMO.#: OMO-BSZ058N03MSGXT-1190

MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ058N03L

Mfr.#: BSZ058N03L

OMO.#: OMO-BSZ058N03L-1190

Neu und Original
BSZ058N03LS

Mfr.#: BSZ058N03LS

OMO.#: OMO-BSZ058N03LS-1190

Neu und Original
BSZ058N03LSGATMA1

Mfr.#: BSZ058N03LSGATMA1

OMO.#: OMO-BSZ058N03LSGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 40A TSDSON-8
BSZ058N03MSG

Mfr.#: BSZ058N03MSG

OMO.#: OMO-BSZ058N03MSG-1190

Trans MOSFET N-CH 30V 14A 8-Pin TSDSON T/R (Alt: BSZ058N03MS G)
BSZ058N03MSG QFN8

Mfr.#: BSZ058N03MSG QFN8

OMO.#: OMO-BSZ058N03MSG-QFN8-1190

Neu und Original
BSZ058N03MSGATMA1 , TFZV

Mfr.#: BSZ058N03MSGATMA1 , TFZV

OMO.#: OMO-BSZ058N03MSGATMA1-TFZV-1190

Neu und Original
BSZ058N03S G

Mfr.#: BSZ058N03S G

OMO.#: OMO-BSZ058N03S-G-1190

Neu und Original
BSZ058N03LSGATMA1-CUT TAPE

Mfr.#: BSZ058N03LSGATMA1-CUT TAPE

OMO.#: OMO-BSZ058N03LSGATMA1-CUT-TAPE-1190

Neu und Original
BSZ058N03LS G

Mfr.#: BSZ058N03LS G

OMO.#: OMO-BSZ058N03LS-G-126

IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
Verfügbarkeit
Aktie:
25
Auf Bestellung:
2008
Menge eingeben:
Der aktuelle Preis von BSZ058N03LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,84 $
0,84 $
10
0,70 $
6,98 $
100
0,45 $
45,00 $
1000
0,36 $
360,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
Top