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RQ3E180GNTB

RQ3E180GNTB
Mfr. #:
RQ3E180GNTB
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 4.5V Drive Nch MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RQ3E180GNTB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RQ3E180GNTB Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HSMT-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
4.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22.4 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Single
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
17 S
Abfallzeit:
10.2 ns
Produktart:
MOSFET
Anstiegszeit:
6.9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
56.8 ns
Typische Einschaltverzögerungszeit:
16.5 ns
Teil # Aliase:
RQ3E180GN
Tags
RQ3E180G, RQ3E18, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
***et
4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 30V, 39A, HSMT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 39A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 20W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Medium Power MOSFETs
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.
Teil # Mfg. Beschreibung Aktie Preis
RQ3E180GNTB
DISTI # RQ3E180GNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 18A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2990In Stock
  • 1000:$0.2587
  • 500:$0.3234
  • 100:$0.4091
  • 10:$0.5340
  • 1:$0.6100
RQ3E180GNTB
DISTI # RQ3E180GNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 18A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2990In Stock
  • 1000:$0.2587
  • 500:$0.3234
  • 100:$0.4091
  • 10:$0.5340
  • 1:$0.6100
RQ3E180GNTB
DISTI # RQ3E180GNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 18A 8-HSMT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.2088
  • 6000:$0.2119
  • 3000:$0.2276
RQ3E180GNTB
DISTI # RQ3E180GNTB		ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE - Tape and Reel (Alt: RQ3E180GNTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2009
  • 18000:$0.2069
  • 12000:$0.2189
  • 6000:$0.2319
  • 3000:$0.2479
RQ3E180GNTB
DISTI # RQ3E180GNTB		ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE (Alt: RQ3E180GNTB)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.2199
  • 500:€0.2369
  • 100:€0.2569
  • 50:€0.2799
  • 25:€0.3089
  • 10:€0.3429
  • 1:€0.3859
RQ3E180GNTB
DISTI # 755-RQ3E180GNTB		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant		3078
  • 1:$0.5800
  • 10:$0.4870
  • 100:$0.3140
  • 1000:$0.2520
  • 3000:$0.2120
  • 9000:$0.2050
  • 24000:$0.1970
RQ3E180GNTBROHM Semiconductor 2376
  • 1177:$0.5950
  • 236:$0.6800
  • 1:$1.7000
RQ3E180GNTB
DISTI # 2706764		ROHM SemiconductorMOSFET, N-CH, 30V, 39A, HSMT-8
RoHS: Compliant		0
  • 500:$0.4880
  • 100:$0.6170
  • 10:$0.8050
  • 1:$0.9200
RQ3E180GNTB
DISTI # 2706764		ROHM SemiconductorMOSFET, N-CH, 30V, 39A, HSMT-810
  • 500:£0.2110
  • 250:£0.2250
  • 100:£0.2390
  • 10:£0.4130
  • 1:£0.5080
RQ3E180GNTBROHM Semiconductor 3000
  • 1:¥7.6286
  • 100:¥4.3254
  • 1500:¥2.7423
  • 3000:¥2.0430
RQ3E180GNTBROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant		Americas -
    RQ3E180GNTBROHM SemiconductorRoHS(ship within 1day)2970
    • 1:$0.9400
    • 10:$0.7100
    • 50:$0.4700
    • 100:$0.3800
    • 500:$0.3500
    • 1000:$0.3400
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von RQ3E180GNTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,58 $
    0,58 $
    10
    0,49 $
    4,87 $
    100
    0,31 $
    31,40 $
    1000
    0,25 $
    252,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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