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SIHG32N50D-GE3

SIHG32N50D-GE3
Mfr. #:
SIHG32N50D-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 500V 30A TO-247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG32N50D-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHG32N50D-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC Vishay SiHG32N50D-GE3
***ure Electronics
N Channel 500 V 150 mO 390 W Flange Mount Power Mosfet - TO-247AC-3
***ical
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AC
***et Europe
Trans MOSFET N-CH 500V 30A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 500V 30A TO-247AC
***ark
MOSFET, N-CH, 500V, 30A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:390W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 500V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:390W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Teil # Mfg. Beschreibung Aktie Preis
SIHG32N50D-GE3
DISTI # V36:1790_09219141		Vishay IntertechnologiesTrans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AC0
  • 500000:$2.5810
  • 250000:$2.5860
  • 50000:$3.2840
  • 5000:$4.7270
  • 500:$4.9800
SIHG32N50D-GE3
DISTI # SIHG32N50D-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 30A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		470In Stock
  • 2500:$2.6432
  • 500:$3.2990
  • 100:$3.8753
  • 25:$4.4716
  • 10:$4.7300
  • 1:$5.2700
SIHG32N50D-GE3
DISTI # SIHG32N50D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 30A 3-Pin TO-247AC (Alt: SIHG32N50D-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.3900
  • 100:€2.4900
  • 500:€2.4900
  • 50:€2.5900
  • 25:€2.8900
  • 10:€3.4900
  • 1:€4.4900
SIHG32N50D-GE3
DISTI # SIHG32N50D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 30A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG32N50D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$2.3900
  • 5000:$2.3900
  • 2000:$2.4900
  • 1000:$2.5900
  • 500:$2.6900
SIHG32N50D-GE3
DISTI # 63W4112		Vishay IntertechnologiesMOSFET Transistor, N Channel, 30 A, 500 V, 0.125 ohm, 10 V, 3 V RoHS Compliant: Yes496
  • 2500:$2.8800
  • 1000:$3.0000
  • 500:$3.4800
  • 100:$3.9300
  • 50:$4.1700
  • 25:$4.4200
  • 10:$4.6700
  • 1:$5.5400
SIHG32N50D-GE3
DISTI # 78-SIHG32N50D-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
RoHS: Compliant		250
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6400
  • 2500:$2.5100
SIHG32N50D-GE3
DISTI # 7879207		Vishay IntertechnologiesMOSFET N-CH 500V 30A LOW CAP. TO247AC, EA27
  • 5:£2.0200
  • 1:£2.0800
SIHG32N50D-GE3
DISTI # 7879207P		Vishay IntertechnologiesMOSFET N-CH 500V 30A LOW CAP. TO247AC, RL262
  • 5:£2.0200
SIHG32N50D-GE3
DISTI # 2283627		Vishay IntertechnologiesMOSFET, N-CH, 500V, 30A, TO-247AC
RoHS: Compliant		496
  • 2500:$4.0000
  • 500:$4.9800
  • 100:$5.8500
  • 25:$6.7400
  • 10:$7.1300
  • 1:$7.9400
SIHG32N50D-GE3
DISTI # 2283627		Vishay IntertechnologiesMOSFET, N-CH, 500V, 30A, TO-247AC498
  • 500:£2.6700
  • 250:£2.9800
  • 100:£3.2900
  • 10:£4.0200
  • 1:£4.9800
Bild Teil # Beschreibung
SIHG32N50D-E3

Mfr.#: SIHG32N50D-E3

OMO.#: OMO-SIHG32N50D-E3

 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG32N50D-GE3

Mfr.#: SIHG32N50D-GE3

OMO.#: OMO-SIHG32N50D-GE3

 MOSFET 500V Vds 30V Vgs TO-247AC
SIHG32N50D-E3

Mfr.#: SIHG32N50D-E3

OMO.#: OMO-SIHG32N50D-E3-VISHAY

 RF Bipolar Transistors MOSFET 500V 32A 390W 150mOhm @ 10V
SIHG32N50D-GE3

Mfr.#: SIHG32N50D-GE3

OMO.#: OMO-SIHG32N50D-GE3-VISHAY

 MOSFET N-CH 500V 30A TO-247AC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von SIHG32N50D-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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ext. Preis
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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