PD55015S-E

PD55015S-E
Mfr. #:
PD55015S-E
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors POWER RF Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD55015S-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD55015S-E DatasheetPD55015S-E Datasheet (P4-P6)PD55015S-E Datasheet (P7-P9)PD55015S-E Datasheet (P10-P12)PD55015S-E Datasheet (P13-P15)PD55015S-E Datasheet (P16-P18)PD55015S-E Datasheet (P19-P21)PD55015S-E Datasheet (P22-P24)PD55015S-E Datasheet (P25)
ECAD Model:
Mehr Informationen:
PD55015S-E Mehr Informationen PD55015S-E Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
5 A
Vds - Drain-Source-Durchbruchspannung:
40 V
Gewinnen:
14 dB
Ausgangsleistung:
15 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PowerSO-10RF-Straight-4
Verpackung:
Rohr
Aufbau:
Single
Höhe:
3.5 mm
Länge:
7.5 mm
Arbeitsfrequenz:
1 GHz
Serie:
PD55015-E
Typ:
HF-Leistungs-MOSFET
Breite:
9.4 mm
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
2.5 S
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
73 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Gewichtseinheit:
0.105822 oz
Tags
PD55015S, PD55015, PD5501, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Straight lead) Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.15uF 16volts X7R 10% T=0.5mm
***icroelectronics
15W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
*** Source Electronics
Current Limit SW 1-IN 1-OUT to 12A Automotive 3-Pin(2+Tab) DPAK Tube / MOSFET N-CH 40V 6A TO252
***ment14 APAC
MOSFET, N CH, 40V, 6A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:55V; On Resistance
***nell
MOSFET, N CH, 40V, 6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 45V; Voltage Vgs Rds on Measurement: 5V
***hard Electronics
STMICROELECTRONICS PD55015-E RF FET Transistor, 40 V, 5 A, 73 W, 480 MHz, 520 MHz, PowerSO-10RF
***icroelectronics
15W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
N CH RF POWER TRANSISTOR, 40V, 5A, PowerSO-10RF; Drain Source Voltage Vds:40V; Continuous Drain Current Id:5A; Power Dissipation:73W; Operating Frequency Min:480MHz; Operating Frequency Max:520MHz; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***ure Electronics
PD55015-E Series 500 MHz 15 W 40 V N-Channel RF Power Transistor - POWERSO-10RF
***p One Stop
Trans RF MOSFET N-CH 40V 5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) T/R
*** Electronic Components
RF MOSFET Transistors N-Ch, 12.5V 15W3 Transistor, LDMOST
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.22uF 16volts X7R 20% T=0.5mm
***icroelectronics
15W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
SI2318CDS-T1-GE3 N-channel MOSFET Transistor; 5.6 A; 40 V; 3-Pin SOT-23
***ure Electronics
N-Channel 40 V 0.042 Ohm 2.1 W Surface Moun Power Mosfet - SOT-23-3
***enic
40V 5.6A 1.25W 42m´Î@10V4.3A 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***et
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 5.6A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
MOSFET,N CH,40V,5.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:20V
***ure Electronics
Single P-Channel 40 V 41 mOhm 80 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
***ment14 APAC
P CHANNEL MOSFET, -40V, 6.2A, SOIC; Tran; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.2A;
***ineon SCT
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
*** Stop Electro
Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
P CHANNEL MOSFET, -40V, 6.2A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
*** Source Electronics
0.6mm profile – ideal for low profile applications | MOSFET P-CH 40V 3.3A U-DFN2020
***ical
Trans MOSFET P-CH 40V 6A Automotive 6-Pin UDFN EP T/R
***ure Electronics
Single P-Channel 40 V 2.1 W 23.2 nC Silicon Surface Mount Mosfet - UDFN-6
***(Formerly Allied Electronics)
MOSFET,P Channel,40V 6A,U-DFN2020-6 | Diodes Inc DMP4047LFDE-7
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 40V VDS, 20±V VGS
***roFlash
Small Signal Field-Effect Transistor, 3.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, P-CH, -40V, UDFN2020; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.2V; Power Dissipation Pd: 700mW; Transistor Case Style: UDFN2020; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ronik
P-CH -40V -3,3A 33mOhm DFN2020
Teil # Mfg. Beschreibung Aktie Preis
PD55015S-E
DISTI # 497-6716-5-ND
STMicroelectronicsFET RF 40V 500MHZ PWRSO-10
RoHS: Compliant
Min Qty: 400
Container: Tube
Temporarily Out of Stock
  • 400:$15.3410
PD55015S-E
DISTI # PD55015S-E
STMicroelectronicsTrans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) - Bag (Alt: PD55015S-E)
RoHS: Compliant
Min Qty: 400
Container: Bag
Americas - 0
  • 400:$15.7900
  • 800:$15.0900
  • 1600:$14.3900
  • 2400:$13.6900
  • 4000:$13.4900
PD55015S-E
DISTI # 511-PD55015S-E
STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
RoHS: Compliant
0
  • 1:$20.4200
  • 5:$20.2100
  • 10:$18.8400
  • 25:$17.9900
  • 100:$16.0900
  • 250:$15.3500
  • 500:$14.6100
PD55015STR-E
DISTI # 511-PD55015STR-E
STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant
0
  • 1:$20.4200
  • 5:$20.2100
  • 10:$18.8400
  • 25:$17.9900
  • 100:$16.0900
  • 250:$15.3500
  • 600:$14.6100
PD55015S-E
DISTI # PD55015S-E
STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 400:$15.3600
  • 500:$14.5300
  • 1000:$13.8000
PD55015SESTMicroelectronics 
RoHS: Compliant
Europe - 50
    Bild Teil # Beschreibung
    PD55015S-E

    Mfr.#: PD55015S-E

    OMO.#: OMO-PD55015S-E

    RF MOSFET Transistors POWER RF Transistor
    PD55008TR-E

    Mfr.#: PD55008TR-E

    OMO.#: OMO-PD55008TR-E

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    Mfr.#: PD55008L-E

    OMO.#: OMO-PD55008L-E

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    OMO.#: OMO-PD55003-STMICROELECTRONICS

    FET RF 40V 500MHZ PWRSO-10
    PD55015

    Mfr.#: PD55015

    OMO.#: OMO-PD55015-1152

    RF MOSFET Transistors N-Ch 40 Volt 5 Amp
    PD5504A

    Mfr.#: PD5504A

    OMO.#: OMO-PD5504A-1190

    Neu und Original
    PD55015TR-E

    Mfr.#: PD55015TR-E

    OMO.#: OMO-PD55015TR-E-STMICROELECTRONICS

    RF MOSFET Transistors N-Ch, 12.5V 15W3 Transistor, LDMOST
    PD55008TR-E

    Mfr.#: PD55008TR-E

    OMO.#: OMO-PD55008TR-E-STMICROELECTRONICS

    TRANSISTOR RF POWERSO-10
    PD55015-E

    Mfr.#: PD55015-E

    OMO.#: OMO-PD55015-E-STMICROELECTRONICS

    FET RF 40V 500MHZ PWRSO-10
    PD55008TR

    Mfr.#: PD55008TR

    OMO.#: OMO-PD55008TR-STMICROELECTRONICS

    FET RF 40V 500MHZ PWRSO-10
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von PD55015S-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    20,42 $
    20,42 $
    5
    20,21 $
    101,05 $
    10
    18,84 $
    188,40 $
    25
    17,99 $
    449,75 $
    100
    16,09 $
    1 609,00 $
    250
    15,35 $
    3 837,50 $
    500
    14,61 $
    7 305,00 $
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