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APT13005SU-G1

APT13005SU-G1
Mfr. #:
APT13005SU-G1
Hersteller:
Diodes Incorporated
Beschreibung:
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT13005SU-G1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-126-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
450 V
Emitter- Basisspannung VEBO:
9 V
Kollektor-Emitter-Sättigungsspannung:
1 V
Maximaler DC-Kollektorstrom:
6.4 A
Bandbreitenprodukt fT gewinnen:
4 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
APT1300
DC-Stromverstärkung hFE Max:
35
Verpackung:
Schüttgut
Marke:
Eingebaute Dioden
DC-Kollektor/Basisverstärkung hfe Min:
15
Pd - Verlustleistung:
20 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
4000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.014110 oz
Tags
APT13005S, APT13005, APT130, APT13, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
450V 3.2A NPN Power Transistor TO126 | Diodes Inc APT13005SU-G1
***nsix Microsemi
Power Bipolar Transistor, 3.2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***et
Trans GP BJT NPN 700V 3.2A 3-Pin TO-126 Bulk
***emi
3.0 A, 80 V Medium Power NPN Bipolar Power Transistor
***Yang
Transistor GP BJT NPN 80V 3A 3-Pin TO-126 - Boxed Product (Development Kits)
***r Electronics
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***-Wing Technology
Bulk Through Hole NPN BD435 Bipolar (BJT) Transistor 85 @ 500mA 1V 4A 36W 3MHz
***Yang
Transistor GP BJT NPN 32V 4A 3-Pin TO-225AA - Boxed Product (Development Kits)
***emi
Medium Power NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***hard Electronics
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 20W
***nsix Microsemi
1.3A I(C) 450V V(BR)CEO 1-Element NPN Silicon TO-126 Plastic/Epoxy
***et
PWR HI VOLTAGE TRANSISTOR TO126 BULK 4K
***-Wing Technology
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 85 @ 500mA 1V 4A 36W 3MHz
***SIT Distribution GmbH
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
***et
Transistor GP BJT PNP 45V 4A 3-Pin TO-126
***nell
TRANSISTOR, PNP TO-126; Transistor Type:Power General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:45V; Current Ic Continuous a Max:4A; Min Hfe:40; Case Style:TO-126; Current Ic Max:4A; Current Ic hFE:2A; No. of Pins:3; Power, Ptot:36W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vcbo:45V; ft, Min:3MHz
*** Electronics
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 465V 20W
***i-Key
TRANS NPN 465V 1.5A TO126
***et
PWR HI VOLTAGE TRANSISTOR TO126 BULK 4K
***hard Electronics
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 465V 20W
***i-Key
TRANS NPN 465V 1.5A TO126
***et
PWR HI VOLTAGE TRANSISTOR TO126 BULK 4K
Teil # Mfg. Beschreibung Aktie Preis
APT13005SU-G1
DISTI # APT13005SU-G1DI-ND		Diodes IncorporatedTRANS NPN 450V 3.2A TO126
RoHS: Compliant
Min Qty: 1
Container: Bulk		3061In Stock
  • 1000:$0.1851
  • 500:$0.2396
  • 100:$0.3049
  • 10:$0.4080
  • 1:$0.4800
APT13005SU-G1
DISTI # APT13005SU-G1		Diodes IncorporatedTrans GP BJT NPN 700V 3.2A 3-Pin TO-126 Bulk (Alt: APT13005SU-G1)
RoHS: Compliant
Min Qty: 4000
Container: Bulk		Asia - 1650
  • 4000:$0.0559
  • 8000:$0.0112
APT13005SU-G1
DISTI # 70550932		Diodes Incorporated450V 3.2A NPN Power Transistor TO126
RoHS: Compliant		0
  • 250:$0.2400
  • 500:$0.2200
  • 1250:$0.1800
  • 2500:$0.1600
APT13005SU-G1
DISTI # 621-APT13005SU-G1		Diodes IncorporatedBipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
RoHS: Compliant		293
  • 1:$0.4400
  • 10:$0.3580
  • 100:$0.2180
  • 1000:$0.1690
  • 4000:$0.1440
APT13005SU-G1
DISTI # 8283332P		Zetex / Diodes Inc450V 3.2A NPN POWER TRANSISTOR TO126, RL2750
  • 150:£0.1540
  • 300:£0.1500
  • 600:£0.1460
  • 1200:£0.1410
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OMO.#: OMO-ECLAMP2422N-TCT-SEMTECH

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Mfr.#: 1747981-1

OMO.#: OMO-1747981-1-TE-CONNECTIVITY

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von APT13005SU-G1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,44 $
0,44 $
10
0,36 $
3,58 $
100
0,22 $
21,80 $
1000
0,17 $
169,00 $
4000
0,14 $
576,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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