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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BF1108215 DISTI # BF1108215 | Nexperia | - Bulk (Alt: BF1108215) Min Qty: 1250 Container: Bulk | Americas - 0 |
|
| BF1108,215 DISTI # 60AC7936 | NXP Semiconductors | RF FET, 3V, SOT-143B,Drain Source Voltage Vds:3V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:-,Operating Frequency Max:-,RF Transistor Case:SOT-143B,No. of Pins:4Pins,Operating Temperature RoHS Compliant: Yes | 0 | |
| BF1108215 | NXP Semiconductors | RF Small Signal Field-Effect Transistor1-ElementUltra High Frequency Band,Silicon,N-Channel, MosFET RoHS: Not Compliant | 232230 |
|
| BF1108,215 DISTI # BF1108-215 | NXP Semiconductors | RF SMALL SIGNAL TRANSISTOR MOSFET RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BF110 OMO.#: OMO-BF110-NXP-SEMICONDUCTORS |
Neu und Original |
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|
Mfr.#: BF1100R215 |
RF Small Signal Field-Effect Transistor 2-Element Ultra High Frequency Band, Silicon, N-Channel, MosFET |
|
|
Mfr.#: BF1100WR |
Neu und Original |
|
|
Mfr.#: BF1100WR115 |
- Bulk (Alt: BF1100WR115) |
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Mfr.#: BF1101R |
Neu und Original |
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Mfr.#: BF1101W |
Neu und Original |
|
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Mfr.#: BF1102115 |
RF Small Signal Field-Effect Transistor 2-Element Ultra High Frequency Band, Silicon, N-Channel, MosFET |
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Mfr.#: BF1107W |
Neu und Original |
|
Mfr.#: BF1100R,235 |
RF MOSFET Transistors Dual N-Channel 14V 30mA 200mW |
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Mfr.#: BF1109,215 OMO.#: OMO-BF1109-215-319 |
RF MOSFET Transistors Dual N-Channel 11V 30mA 200mW |