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IRFB4212PBF

IRFB4212PBF
Mfr. #:
IRFB4212PBF
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET MOSFT 100V 18A 72.5mOhm 15nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB4212PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB4212PBF DatasheetIRFB4212PBF Datasheet (P4-P6)IRFB4212PBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
60 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
18 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
72.5 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
15 nC
Tags
IRFB421, IRFB42, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S
***ineon SCT
100V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ical
Trans MOSFET N-CH 100V 18A 3-Pin(3+Tab) TO-220AB Tube
*** Electronics
INTERNATIONAL RECTIFIER IRFB4212PBF MOSFET Transistor, N Channel, 18 A, 100 V, 72.5 mohm, 10 V, 5 V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 100V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):72.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4212; Current Id Max:18A; N-channel Gate Charge:15nC; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60mW; Pulse Current Idm:57A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***ponent Stockers USA
22 A 100 V 0.064 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***Yang
MOSFET N-CH 100V 22A TO-220AB - Bulk
***ter Electronics
PWR MOS ULTRAFET 100V/22A/0.06
***ure Electronics
Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3
*** electronic
Transistor MOSFET N-Ch. 16A/100V TO220
***et
Trans MOSFET N-CH 100V 14A 3-Pin (3+Tab) TO-220AB
***enic
100V 14A 88W 160m´Î@10V8.4A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 100V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:100V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:88W; Power Dissipation Pd:88W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
***itex
Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220
***eco
Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 100V 17A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 100 V 0.18 Ohm Through Hole Mosfet - TO-220
*** Stop Electro
Power Field-Effect Transistor, 12.8A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ment14 APAC
MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:65W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (07-Jul-2017)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
N-Channel Power MOSFET, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 00 V 0.18 Ohm Through Hole Mosfet - TO-220
***nell
MOSFET, N-CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***r Electronics
Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ark
N CH MOSFET, TRENCH AUTO, 100V, 75A, 3TO220AB; Transistor Polarity:N Channel; Co
***ical
Trans MOSFET N-CH 100V 23A Automotive 3-Pin(3+Tab) TO-220AB Tube
***peria
N-channel TrenchMOS standard level FET
*** Americas
STANDARD MARKING * HORIZONTAL, RAIL PACK
Teil # Mfg. Beschreibung Aktie Preis
IRFB4212PBF
DISTI # IRFB4212PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 18A TO-220AB
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IRFB4212PBF
    DISTI # 942-IRFB4212PBF    		Infineon Technologies AGMOSFET MOSFT 100V 18A 72.5mOhm 15nC Qg
    RoHS: Compliant    		0
      IRFB4212PBF
      DISTI # IRFB4212PBF      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,18A,60W,TO220AB35
      • 1:$1.1200
      • 3:$0.9700
      • 10:$0.8900
      • 100:$0.8400
      IRFB4212PBF
      DISTI # IRFB4212PBF      		Infineon Technologies AGN-Ch 100V 18A 60W 0,0725R TO220AB
      RoHS: Compliant      		40
      • 10:€0.9760
      • 50:€0.6760
      • 200:€0.6160
      • 500:€0.5930
      IRFB4212PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 950
        IRFB4212PBF
        DISTI # 1436956        		Infineon Technologies AGMOSFET, N, 100V, TO-220AB
        RoHS: Compliant        		0
        • 1:$2.6700
        • 10:$2.2000
        • 100:$1.7800
        • 500:$1.5900
        • 1000:$1.4100
        • 2500:$1.3100
        • 5000:$1.2700
        • 10000:$1.1900
        Bild Teil # Beschreibung
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von IRFB4212PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,01 $
        1,01 $
        10
        0,96 $
        9,60 $
        100
        0,91 $
        90,97 $
        500
        0,86 $
        429,60 $
        1000
        0,81 $
        808,60 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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