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BSC059N04LS6ATMA1

BSC059N04LS6ATMA1
Mfr. #:
BSC059N04LS6ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC059N04LS6ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC059N04LS6ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
59 A
Rds On - Drain-Source-Widerstand:
5.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
9.4 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
38 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
100 S
Abfallzeit:
2 ns
Produktart:
MOSFET
Anstiegszeit:
1.2 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
8 ns
Typische Einschaltverzögerungszeit:
3 ns
Tags
BSC059N04, BSC059N0, BSC059, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
OptiMOS™ 6 Power MOSFETs
Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation, and best-in-class performance. The OptiMOS 6 family utilizes thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimized for synchronous rectification.
Teil # Mfg. Beschreibung Aktie Preis
BSC059N04LS6ATMA1
DISTI # 33792145		Infineon Technologies AGBSC059N04LS6ATMA15000
  • 5000:$0.3227
BSC059N04LS6ATMA1
DISTI # BSC059N04LS6ATMA1CT-ND		Infineon Technologies AGTRENCH <= 40V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4920In Stock
  • 1000:$0.4398
  • 500:$0.5571
  • 100:$0.6743
  • 10:$0.8650
  • 1:$0.9700
BSC059N04LS6ATMA1
DISTI # BSC059N04LS6ATMA1DKR-ND		Infineon Technologies AGTRENCH <= 40V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4920In Stock
  • 1000:$0.4398
  • 500:$0.5571
  • 100:$0.6743
  • 10:$0.8650
  • 1:$0.9700
BSC059N04LS6ATMA1
DISTI # BSC059N04LS6ATMA1TR-ND		Infineon Technologies AGTRENCH <= 40V
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.3606
  • 10000:$0.3644
  • 5000:$0.3786
BSC059N04LS6ATMA1
DISTI # V72:2272_22937624		Infineon Technologies AGBSC059N04LS6ATMA10
    BSC059N04LS6ATMA1
    DISTI # V36:1790_22937624    		Infineon Technologies AGBSC059N04LS6ATMA10
    • 5000:$0.3158
    BSC059N04LS6ATMA1
    DISTI # BSC059N04LS6ATMA1    		Infineon Technologies AGOptiMO 6 40V power MOSFETs combining best-in-class RDS(on) with superior switching performance - Tape and Reel (Alt: BSC059N04LS6ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
      BSC059N04LS6ATMA1
      DISTI # SP001687052      		Infineon Technologies AGOptiMO 6 40V power MOSFETs combining best-in-class RDS(on) with superior switching performance (Alt: SP001687052)
      RoHS: Compliant
      Min Qty: 5000      		Europe - 0
      • 50000:€0.3489
      • 30000:€0.3679
      • 20000:€0.4289
      • 10000:€0.5039
      • 5000:€0.5859
      BSC059N04LS6ATMA1
      DISTI # 02AH1042      		Infineon Technologies AGMOSFET, N-CH, 40V, 59A, 175DEG C, 38W,Transistor Polarity:N Channel,Continuous Drain Current Id:59A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,Power RoHS Compliant: Yes0
      • 1000:$0.4140
      • 500:$0.5250
      • 250:$0.5560
      • 100:$0.5860
      • 50:$0.6460
      • 25:$0.7070
      • 10:$0.7680
      • 1:$0.8990
      BSC059N04LS6ATMA1
      DISTI # 726-BSC059N04LS6ATMA      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		4716
      • 1:$0.8900
      • 10:$0.7590
      • 100:$0.5830
      • 500:$0.5160
      • 1000:$0.4070
      • 2500:$0.3610
      • 5000:$0.3610
      • 10000:$0.3480
      BSC059N04LS6ATMA1
      DISTI # 3051946      		Infineon Technologies AGMOSFET, N-CH, 40V, 59A, 175DEG C, 38W
      RoHS: Compliant      		0
      • 500:$0.5320
      • 250:$0.5580
      • 100:$0.5900
      • 10:$0.7330
      • 1:$0.8450
      BSC059N04LS6ATMA1
      DISTI # 3051946      		Infineon Technologies AGMOSFET, N-CH, 40V, 59A, 175DEG C, 38W4970
      • 500:£0.2700
      • 250:£0.2760
      • 100:£0.2820
      • 10:£0.2880
      • 1:£0.2940
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1987
      Menge eingeben:
      Der aktuelle Preis von BSC059N04LS6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,89 $
      0,89 $
      10
      0,76 $
      7,59 $
      100
      0,58 $
      58,30 $
      500
      0,52 $
      258,00 $
      1000
      0,41 $
      407,00 $
      2500
      0,36 $
      902,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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