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IPB77N06S212ATMA2

IPB77N06S212ATMA2
Mfr. #:
IPB77N06S212ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CHANNEL_55/60V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB77N06S212ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB77N06S212ATMA2 DatasheetIPB77N06S212ATMA2 Datasheet (P4-P6)IPB77N06S212ATMA2 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
IPB77N06S212ATMA2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
IPB77N06S2-12 SP001061294
Gewichtseinheit:
0.139332 oz
Tags
IPB77N06S2, IPB77, IPB7, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET N-CH 55V 77A 3-Pin TO-263 T/R
***et
Trans MOSFET N-CH 55V 77A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 55V 77A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB77N06S212ATMA2
DISTI # V36:1790_06384641		Infineon Technologies AGTrans MOSFET N-CH 55V 77A Automotive 3-Pin(2+Tab) D2PAK T/R0
  • 1000:$0.7565
IPB77N06S212ATMA2
DISTI # IPB77N06S212ATMA2-ND		Infineon Technologies AGMOSFET N-CH 55V 77A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.9887
IPB77N06S212ATMA2
DISTI # SP001061294		Infineon Technologies AGTrans MOSFET N-CH 55V 77A 3-Pin TO-263 T/R (Alt: SP001061294)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 23990
  • 10000:€0.7359
  • 6000:€0.7879
  • 4000:€0.8489
  • 2000:€0.9199
  • 1000:€1.1039
IPB77N06S212ATMA2
DISTI # IPB77N06S212ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 77A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB77N06S212ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8249
  • 6000:$0.8399
  • 4000:$0.8689
  • 2000:$0.9009
  • 1000:$0.9349
IPB77N06S212ATMA2
DISTI # IPB77N06S212ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 77A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB77N06S212ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8249
  • 6000:$0.8399
  • 4000:$0.8689
  • 2000:$0.9009
  • 1000:$0.9349
IPB77N06S212ATMA2
DISTI # 726-IPB77N06S212ATMA		Infineon Technologies AGMOSFET N-CHANNEL_55/60V819
  • 1:$1.4800
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6750
  • 2000:$0.5990
  • 10000:$0.5770
IPB77N06S212ATMA2
DISTI # XSKDRABV0021220		Infineon Technologies AG 
RoHS: Compliant		18990 in Stock0 on Order
  • 18990:$1.1600
  • 1000:$1.2500
Bild Teil # Beschreibung
CS30CL

Mfr.#: CS30CL

OMO.#: OMO-CS30CL

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OMO.#: OMO-MMBT3904VL

 Bipolar Transistors - BJT MMBT3904/TO-236AB/REEL 11" Q3/
UMK105B7104KV-FR

Mfr.#: UMK105B7104KV-FR

OMO.#: OMO-UMK105B7104KV-FR

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50V X7R +/-10% 0402 Gen Purp
RLP1-600-500

Mfr.#: RLP1-600-500

OMO.#: OMO-RLP1-600-500

 LED Light Pipes SMD Single RA 2.8mm 14mm Protrusion
MMBT3904VL

Mfr.#: MMBT3904VL

OMO.#: OMO-MMBT3904VL-NEXPERIA

 MMBT3904/SOT23/TO-236AB
UMK105B7104KV-FR

Mfr.#: UMK105B7104KV-FR

OMO.#: OMO-UMK105B7104KV-FR-TAIYO-YUDEN

 Multilayer Ceramic Capacitors MLCC - SMD/SMT Midhigh 0402 X7R 50V 0.1uF 10%
RLP1-600-500

Mfr.#: RLP1-600-500

OMO.#: OMO-RLP1-600-500-BIVAR

 LED Light Pipes SMD Single RA 2.8mm 14mm Protrusion
CC0603CRNPO9BNR68

Mfr.#: CC0603CRNPO9BNR68

OMO.#: OMO-CC0603CRNPO9BNR68-YAGEO

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.68pF 50V NPO .25pF
CS30CL

Mfr.#: CS30CL

OMO.#: OMO-CS30CL-STMICROELECTRONICS

 IC OPAMP CURR 450KHZ SOT23-5
XAL5030-102MEC

Mfr.#: XAL5030-102MEC

OMO.#: OMO-XAL5030-102MEC-1190

 Fixed Inductors 1uH 20% 11.1A .0205mOhms AEC-Q200
Verfügbarkeit
Aktie:
819
Auf Bestellung:
2802
Menge eingeben:
Der aktuelle Preis von IPB77N06S212ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,48 $
1,48 $
10
1,26 $
12,60 $
100
0,97 $
96,80 $
500
0,86 $
428,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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