FDP8447L

FDP8447L
Mfr. #:
FDP8447L
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 40V N-CH PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDP8447L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDP8447L Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
8.7 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FDP8447L
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
28 ns
Typische Einschaltverzögerungszeit:
9 ns
Gewichtseinheit:
0.063493 oz
Tags
FDP84, FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 40V 12A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 40 V 8.7 mOhm PowerTrench® Mosfet - TO-220
***emi
N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N-CHANNEL POWERTRENCH MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
***ment14 APAC
MOSFET, N CH, 40V, 50A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:2W; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***i-Key
MOSFET N-CH 30V 75A TO220AB
***ser
MOSFETs- Power and Small Signal 30V 75A N-Channel
***el Electronic
20V PCH+PCH MIDDLE POWER MOSFET,
***et
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Rail
***ser
MOSFETs- Power and Small Signal 30V 75A N-Channel No-Cancel/No-Return
***el Electronic
MOSFET N-CH 30V 75A TO220AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 40 Volt 100A 3-Pin(3+Tab) TO-220AB
***ure Electronics
Single N-Channel 40 V 0.009 Ohm 93 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 40V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:9mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDP8447L
DISTI # FDP8447L-ND
ON SemiconductorMOSFET N-CH 40V 12A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
1020In Stock
  • 1600:$0.6641
  • 800:$0.7350
  • 100:$1.0847
  • 10:$1.3730
  • 1:$1.5500
FDP8447L
DISTI # FDP8447L
ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L)
RoHS: Compliant
Min Qty: 1600
Container: Tube
Asia - 0
    FDP8447L
    DISTI # FDP8447L
    ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8447L)
    RoHS: Compliant
    Min Qty: 1600
    Container: Tube
    Americas - 0
    • 1600:$0.4569
    • 3200:$0.4539
    • 4800:$0.4479
    • 8000:$0.4429
    • 16000:$0.4319
    FDP8447L
    DISTI # FDP8447L
    ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€0.7759
    • 10:€0.6889
    • 25:€0.6199
    • 50:€0.5639
    • 100:€0.5169
    • 500:€0.4769
    • 1000:€0.4429
    FDP8447L
    DISTI # 52M3195
    ON SemiconductorN CHANNEL MOSFET, 40V, 12A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,MSL:- RoHS Compliant: Yes0
    • 1:$1.4500
    • 10:$1.1300
    • 100:$0.8870
    • 1000:$0.6050
    • 2000:$0.6010
    • 10000:$0.5690
    • 24000:$0.5530
    • 50000:$0.5410
    FDP8447L
    DISTI # 512-FDP8447L
    ON SemiconductorMOSFET 40V N-CH PowerTrench MOSFET
    RoHS: Compliant
    1402
    • 1:$1.3300
    • 10:$1.1300
    • 100:$0.8660
    • 500:$0.7650
    • 1000:$0.6040
    FDP8447LFairchild Semiconductor CorporationPower Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    8000
    • 1000:$0.7600
    • 500:$0.8000
    • 100:$0.8400
    • 25:$0.8700
    • 1:$0.9400
    Bild Teil # Beschreibung
    2N5088

    Mfr.#: 2N5088

    OMO.#: OMO-2N5088

    Bipolar Transistors - BJT NPN Gen Pur SS
    CD74HCT4053E

    Mfr.#: CD74HCT4053E

    OMO.#: OMO-CD74HCT4053E

    Multiplexer Switch ICs Triple 2ch
    LM7805CT/NOPB

    Mfr.#: LM7805CT/NOPB

    OMO.#: OMO-LM7805CT-NOPB

    Linear Voltage Regulators 5 Volt Reg
    RS01A1R000FE70

    Mfr.#: RS01A1R000FE70

    OMO.#: OMO-RS01A1R000FE70

    Wirewound Resistors - Through Hole 1watt 1ohms 1%
    C310T-SC-2-R-TR1

    Mfr.#: C310T-SC-2-R-TR1

    OMO.#: OMO-C310T-SC-2-R-TR1

    Cartridge Fuses 2A 250V high I2t ceramic
    RS01A1R200FE70

    Mfr.#: RS01A1R200FE70

    OMO.#: OMO-RS01A1R200FE70-1098

    Wirewound Resistors - Through Hole 1watt 1.2ohms 1%
    RS01A1R000FE70

    Mfr.#: RS01A1R000FE70

    OMO.#: OMO-RS01A1R000FE70-VISHAY-DALE

    Wirewound Resistors - Through Hole 1watt 1ohms 1%
    VS-12TQ040-M3

    Mfr.#: VS-12TQ040-M3

    OMO.#: OMO-VS-12TQ040-M3-VISHAY

    DIODE SCHOTTKY 40V 15A TO220AC
    LM7805CT/NOPB

    Mfr.#: LM7805CT/NOPB

    OMO.#: OMO-LM7805CT-NOPB-TEXAS-INSTRUMENTS

    Linear Voltage Regulators 5 Volt Reg
    2N5088

    Mfr.#: 2N5088

    OMO.#: OMO-2N5088-CENTRAL-SEMICONDUCTOR

    TRANS NPN 30V 0.05A TO92
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von FDP8447L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,33 $
    1,33 $
    10
    1,13 $
    11,30 $
    100
    0,87 $
    86,60 $
    500
    0,76 $
    382,50 $
    1000
    0,60 $
    604,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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