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IRF3717PBF

IRF3717PBF
Mfr. #:
IRF3717PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3717PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3717PBF DatasheetIRF3717PBF Datasheet (P4-P6)IRF3717PBF Datasheet (P7-P9)IRF3717PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
5.7 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
3.9 mm
Marke:
Infineon-Technologien
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
3800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
SP001564392
Gewichtseinheit:
0.019048 oz
Tags
IRF3717, IRF371, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IRF3717PBF
DISTI # 8327905		Infineon Technologies AGTrans MOSFET N-CH 20V 20A 8-Pin SOIC Tube
RoHS: Compliant		837
  • 38000:$0.5797
  • 22800:$0.5817
  • 15200:$0.5826
  • 7600:$0.5845
  • 3800:$0.5855
IRF3717TRPBF
DISTI # IRF3717PBFCT-ND		Infineon Technologies AGMOSFET N-CH 20V 20A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13075In Stock
  • 1000:$0.6268
  • 500:$0.7939
  • 100:$1.0237
  • 10:$1.2950
  • 1:$1.4600
IRF3717TRPBF
DISTI # IRF3717PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 20V 20A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13075In Stock
  • 1000:$0.6268
  • 500:$0.7939
  • 100:$1.0237
  • 10:$1.2950
  • 1:$1.4600
IRF3717TRPBF
DISTI # IRF3717PBFTR-ND		Infineon Technologies AGMOSFET N-CH 20V 20A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		12000In Stock
  • 4000:$0.5679
IRF3717PBF
DISTI # IRF3717PBF-ND		Infineon Technologies AGMOSFET N-CH 20V 20A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF3717PBF
    DISTI # IRF3717PBF    		Infineon Technologies AGTrans MOSFET N-CH 20V 20A 8-Pin SOIC - Rail/Tube (Alt: IRF3717PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 1805
      IRF3717PBF.
      DISTI # 27AC6869      		Infineon Technologies AGN CHANNEL MOSFET, 20V, 20A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Product Range:- RoHS Compliant: Yes0
        IRF3717PBF
        DISTI # 70018214        		Infineon Technologies AGIRF3717PBF N-channel MOSFET Transistor,20 A,20 V,8-Pin SOIC
        RoHS: Compliant        		0
        • 3800:$1.2000
        IRF3717PBFInternational RectifierPower Field-Effect Transistor, 20A I(D), 20V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		1425
        • 1000:$0.5100
        • 500:$0.5400
        • 100:$0.5600
        • 25:$0.5900
        • 1:$0.6300
        IRF3717PBF
        DISTI # 942-IRF3717PBF        		Infineon Technologies AGMOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC
        RoHS: Compliant        		621
        • 1:$1.2800
        • 10:$1.0900
        • 100:$0.8330
        • 500:$0.7360
        • 1000:$0.5810
        • 2500:$0.5160
        • 10000:$0.4960
        IRF3717PBF
        DISTI # 6886869        		Infineon Technologies AGMOSFET N-CHANNEL 20V 20A HEXFET SOIC8, PK310
        • 5:£0.9460
        • 25:£0.6620
        • 50:£0.6520
        • 250:£0.6460
        • 500:£0.6360
        IRF3717PBF
        DISTI # IRF3717PBF        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,20V,20A,2.5W,SO8193
        • 1:$0.7900
        • 3:$0.7200
        • 10:$0.5900
        • 95:$0.5100
        IRF3717PBF
        DISTI # 1013429        		Infineon Technologies AGMOSFET, N, LOGIC, SO-8
        RoHS: Compliant        		1106
        • 5:£0.9150
        • 25:£0.6520
        • 100:£0.6300
        • 250:£0.5940
        • 500:£0.5570
        IRF3717PBF
        DISTI # C1S322000584680        		Infineon Technologies AGMOSFETs839
        • 500:$0.6380
        • 100:$0.7100
        • 50:$0.8450
        • 25:$0.9470
        • 5:$1.3000
        IRF3717PBF
        DISTI # 1013429        		Infineon Technologies AGMOSFET, N, LOGIC, SO-8
        RoHS: Compliant        		1106
        • 1:$2.0300
        • 10:$1.7300
        • 100:$1.3300
        • 500:$1.1700
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        		 RES 0.005 OHM 1% 1W 1210
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von IRF3717PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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