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FQPF8N80CYDTU

FQPF8N80CYDTU
Mfr. #:
FQPF8N80CYDTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET HIGH VOLTAGE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQPF8N80CYDTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FQPF8N80CYDTU DatasheetFQPF8N80CYDTU Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
1.55 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
59 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQPF8N80C
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
70 ns
Produktart:
MOSFET
Anstiegszeit:
110 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
40 ns
Gewichtseinheit:
0.090478 oz
Tags
FQPF8N80C, FQPF8N8, FQPF8N, FQPF8, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***ure Electronics
N-Channel 800 V 1.55 Ohm Flange Mount Mosfet - TO-220F
***ical
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail
***i-Key
MOSFET N-CH 800V 8A TO-220F
***inecomponents.com
800V, 8A, NCH, MOSFET
***ser
IGBTs HIGH_VOLTAGE
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQPF8N80CYDTU
DISTI # V99:2348_06359004		ON Semiconductor800V, 8A, NCH, MOSFET800
  • 1000:$1.0309
  • 500:$1.2029
  • 100:$1.3424
  • 10:$1.6155
  • 1:$1.8386
FQPF8N80CYDTU
DISTI # FQPF8N80CYDTU-ND		ON SemiconductorMOSFET N-CH 800V 8A TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		128In Stock
  • 100:$1.7931
  • 10:$2.2310
  • 1:$2.4700
FQPF8N80CYDTU
DISTI # 30653540		ON Semiconductor800V, 8A, NCH, MOSFET800
  • 500:$1.2029
  • 100:$1.3424
  • 10:$1.6155
  • 6:$1.8386
FQPF8N80CYDTU
DISTI # FQPF8N80CYDTU		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF8N80CYDTU)
RoHS: Compliant
Min Qty: 1		Europe - 37295
  • 1:€1.3539
  • 10:€1.2309
  • 25:€1.1279
  • 50:€1.0829
  • 100:€1.0409
  • 500:€1.0029
  • 1000:€0.9669
FQPF8N80CYDTU
DISTI # FQPF8N80CYDTU		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF8N80CYDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.0679
  • 1600:$1.0619
  • 3200:$1.0479
  • 4800:$1.0349
  • 8000:$1.0089
FQPF8N80CYDTU
DISTI # 512-FQPF8N80CYDTU		ON SemiconductorMOSFET HIGH VOLTAGE
RoHS: Compliant		274
  • 1:$2.1400
  • 10:$1.8200
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0600
  • 2500:$0.9790
  • 5000:$0.9420
FQPF8N80CYDTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		417
  • 1000:$1.5200
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
FQPF8N80CYDTU
DISTI # XSKDRABV0019416		ONS 
RoHS: Compliant		800
  • 800:$2.2000
FQPF8N80CYDTU
DISTI # C1S541901511757		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube
RoHS: Compliant		800
  • 500:$1.2018
  • 100:$1.3407
  • 10:$1.6130
  • 1:$1.8358
Bild Teil # Beschreibung
MIC4452YN

Mfr.#: MIC4452YN

OMO.#: OMO-MIC4452YN

 Gate Drivers 12A Hi-Speed, Hi-Current Single MOSFET Driver
TTC5200(Q)

Mfr.#: TTC5200(Q)

OMO.#: OMO-TTC5200-Q-

 Bipolar Transistors - BJT NPN PWR Amp Trans 15A 150W 230V
TTC5200(Q)

Mfr.#: TTC5200(Q)

OMO.#: OMO-TTC5200-Q--TOSHIBA-SEMICONDUCTOR-AND-STOR

 Bipolar Transistors - BJT NPN PWR Amp Trans 15A 150W 230V
MIC4452YN

Mfr.#: MIC4452YN

OMO.#: OMO-MIC4452YN-MICROCHIP-TECHNOLOGY

 IC DRIVER MOSF 12A LO SIDE 8DIP
Verfügbarkeit
Aktie:
272
Auf Bestellung:
2255
Menge eingeben:
Der aktuelle Preis von FQPF8N80CYDTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,14 $
2,14 $
10
1,82 $
18,20 $
100
1,45 $
145,00 $
500
1,27 $
635,00 $
1000
1,05 $
1 050,00 $
2500
0,98 $
2 457,50 $
5000
0,95 $
4 730,00 $
10000
0,91 $
9 100,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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