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SIR638ADP-T1-RE3

SIR638ADP-T1-RE3
Mfr. #:
SIR638ADP-T1-RE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 40V 100A POWERPAKSO
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR638ADP-T1-RE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SIR638, SIR63, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R
***i-Key
MOSFET N-CH 40V 100A POWERPAKSO
***ark
MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):730�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):730µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 40V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):730µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.3V; Dissipazione di Potenza Pd:104W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Teil # Mfg. Beschreibung Aktie Preis
SIR638ADP-T1-RE3
DISTI # SIR638ADP-T1-RE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5818In Stock
  • 1000:$0.9103
  • 500:$1.0987
  • 100:$1.3372
  • 10:$1.6640
  • 1:$1.8500
SIR638ADP-T1-RE3
DISTI # SIR638ADP-T1-RE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5818In Stock
  • 1000:$0.9103
  • 500:$1.0987
  • 100:$1.3372
  • 10:$1.6640
  • 1:$1.8500
SIR638ADP-T1-RE3
DISTI # SIR638ADP-T1-RE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.7924
  • 3000:$0.8229
SIR638ADP-T1-RE3
DISTI # SIR638ADP-T1-RE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIR638ADP-T1-RE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7439
  • 18000:$0.7639
  • 12000:$0.7859
  • 6000:$0.8189
  • 3000:$0.8439
SIR638ADP-T1-RE3
DISTI # SIR638ADP-T1-RE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIR638ADP-T1-RE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.7419
  • 18000:€0.7849
  • 12000:€0.8839
  • 6000:€1.0709
  • 3000:€1.5289
SIR638ADP-T1-RE3
DISTI # 50AC9660		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):730µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,Power RoHS Compliant: Yes5712
  • 500:$1.0200
  • 250:$1.1000
  • 100:$1.1700
  • 50:$1.2800
  • 25:$1.3900
  • 10:$1.5000
  • 1:$1.8200
SIR638ADP-T1-RE3
DISTI # 59AC7442		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
  • 10000:$0.7260
  • 6000:$0.7550
  • 4000:$0.7840
  • 2000:$0.8710
  • 1000:$0.9180
  • 1:$0.9760
SIR638ADP-T1-RE3
DISTI # 78-SIR638ADP-T1-RE3		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		5331
  • 1:$1.8000
  • 10:$1.4900
  • 100:$1.1600
  • 500:$1.0100
  • 1000:$0.8420
  • 3000:$0.7840
SIR638ADP-T1-RE3
DISTI # 2846629		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, POWERPAK SO5698
  • 500:£0.7710
  • 250:£0.8270
  • 100:£0.8820
  • 10:£1.1800
  • 1:£1.5600
SIR638ADP-T1-RE3
DISTI # 2846629		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, POWERPAK SO
RoHS: Compliant		5702
  • 1000:$1.3800
  • 500:$1.6600
  • 100:$2.0200
  • 5:$2.5100
Bild Teil # Beschreibung
SIR638ADP-T1-RE3

Mfr.#: SIR638ADP-T1-RE3

OMO.#: OMO-SIR638ADP-T1-RE3

 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR638ADP-T1-RE3

Mfr.#: SIR638ADP-T1-RE3

OMO.#: OMO-SIR638ADP-T1-RE3-VISHAY

 MOSFET N-CH 40V 100A POWERPAKSO
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von SIR638ADP-T1-RE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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