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FDD10N20LZTM

FDD10N20LZTM
Mfr. #:
FDD10N20LZTM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 200V N-Channel MOSFET, UniFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDD10N20LZTM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDD10N20LZTM Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
7.6 A
Rds On - Drain-Source-Widerstand:
300 mOhms
Qg - Gate-Ladung:
12 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
56 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
FDD10N20LZ
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
8 S
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.009184 oz
Tags
FDD10N, FDD10, FDD1, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET,UniFETTM, Logic Level, 200 V, 7.6 A, 360 mΩ, DPAK
***ure Electronics
FDD10N20LZ Series 200 V 7.6 A 360 mOhm N-Channel UniFet Mosfet - DPAK-3
***ark
TAPE REEL/UNIFET1 200V N-CHANNEL MOSFET, DPAK, ZENER BUILT IN PRODUCT,
***r Electronics
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 200V, 7.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.6A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Teil # Mfg. Beschreibung Aktie Preis
FDD10N20LZTM
DISTI # FDD10N20LZTMCT-ND		ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4398In Stock
  • 1000:$0.4107
  • 500:$0.5073
  • 100:$0.6764
  • 10:$0.8690
  • 1:$0.9900
FDD10N20LZTM
DISTI # FDD10N20LZTMDKR-ND		ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4398In Stock
  • 1000:$0.4107
  • 500:$0.5073
  • 100:$0.6764
  • 10:$0.8690
  • 1:$0.9900
FDD10N20LZTM
DISTI # FDD10N20LZTMTR-ND		ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3635
FDD10N20LZTM
DISTI # FDD10N20LZTM		ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2539
  • 5000:$0.2519
  • 10000:$0.2489
  • 15000:$0.2459
  • 25000:$0.2399
FDD10N20LZTM
DISTI # FDD10N20LZTM		ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.3579
  • 5000:€0.2929
  • 10000:€0.2679
  • 15000:€0.2479
  • 25000:€0.2299
FDD10N20LZTM
DISTI # FDD10N20LZTM		ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$0.2650
  • 5000:$0.2548
  • 7500:$0.2453
  • 12500:$0.2366
  • 25000:$0.2284
  • 62500:$0.2208
  • 125000:$0.2172
FDD10N20LZTM
DISTI # 27T6420		ON SemiconductorUF 200V 360MOHM L DPAK / REEL0
  • 1:$0.3020
  • 2500:$0.3000
  • 10000:$0.2890
  • 25000:$0.2800
FDD10N20LZTM
DISTI # 46AC0763		ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2182
  • 1:$1.0000
  • 10:$0.8210
  • 25:$0.7280
  • 50:$0.6500
  • 100:$0.5600
  • 250:$0.4950
  • 500:$0.3960
  • 1000:$0.3820
FDD10N20LZTM
DISTI # 512-FDD10N20LZTM		ON SemiconductorMOSFET 200V N-Channel MOSFET, UniFET
RoHS: Compliant		5208
  • 1:$0.8000
  • 10:$0.6610
  • 100:$0.4270
  • 1000:$0.3420
  • 2500:$0.2880
  • 10000:$0.2780
  • 25000:$0.2670
FDD10N20LZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant		214732
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
FDD10N20LZTM
DISTI # 2825151		ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3
RoHS: Compliant		2182
  • 5:$1.2500
  • 25:$1.0700
  • 100:$0.7310
  • 250:$0.6000
  • 500:$0.4910
  • 1000:$0.4540
  • 5000:$0.4280
FDD10N20LZTM
DISTI # 2825151		ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3
RoHS: Compliant		2187
  • 5:£0.7300
  • 25:£0.6530
  • 100:£0.5040
  • 250:£0.4390
  • 500:£0.3730
Bild Teil # Beschreibung
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OMO.#: OMO-AD8553ARMZ-ANALOG-DEVICES-INC-ADI

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R1580N001A-TR-FE

Mfr.#: R1580N001A-TR-FE

OMO.#: OMO-R1580N001A-TR-FE-176

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Mfr.#: LM358ADR

OMO.#: OMO-LM358ADR-TEXAS-INSTRUMENTS

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PGA460TPWRQ1

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 IC ULTRASONIC SENSOR 16-TSSOP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FDD10N20LZTM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,80 $
0,80 $
10
0,66 $
6,61 $
100
0,43 $
42,70 $
1000
0,34 $
342,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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