NGTB40N60FL2WG

NGTB40N60FL2WG
Mfr. #:
NGTB40N60FL2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 600V/40A FAST IGBT FSII T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB40N60FL2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N60FL2WG DatasheetNGTB40N60FL2WG Datasheet (P4-P6)NGTB40N60FL2WG Datasheet (P7-P9)NGTB40N60FL2WG Datasheet (P10)
ECAD Model:
Mehr Informationen:
NGTB40N60FL2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.85 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
366 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
NGTB40N60, NGTB40N6, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ied Electronics & Automation
NGTB40N60FL2WG; IGBT Transistor; 80 A 600 V; 1MHz; 3-Pin TO-247
***nell
600V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB40N60FL2WG
DISTI # V99:2348_07301290
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8
  • 2500:$1.2715
  • 1000:$1.2872
  • 500:$1.3381
  • 250:$1.3675
  • 100:$1.3812
  • 10:$1.4161
  • 1:$2.7717
NGTB40N60FL2WG
DISTI # NGTB40N60FL2WGOS-ND
ON SemiconductorIGBT 600V 80A 366W TO247
RoHS: Compliant
Min Qty: 90
Container: Tube
On Order
  • 90:$4.6842
NGTB40N60FL2WG
DISTI # 30243099
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8
  • 3:$2.7717
NGTB40N60FL2WG
DISTI # NGTB40N60FL2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube
Asia - 0
    NGTB40N60FL2WG
    DISTI # NGTB40N60FL2WG
    ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€4.4800
    • 10:€3.4400
    • 100:€2.9800
    • 250:€2.8300
    • 500:€2.5500
    NGTB40N60FL2WG
    DISTI # NGTB40N60FL2WG
    ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Bulk (Alt: NGTB40N60FL2WG)
    Min Qty: 118
    Container: Bulk
    Americas - 0
    • 118:$2.6900
    • 120:$2.6900
    • 238:$2.6900
    • 590:$2.5900
    • 1180:$2.5900
    NGTB40N60FL2WG
    DISTI # 70600205
    ON SemiconductorNGTB40N60FL2WG,IGBT Transistor,80 A 600 V,1MHz,3-Pin TO-247
    RoHS: Compliant
    0
    • 2:$3.6000
    • 10:$3.4200
    • 20:$3.2500
    • 50:$3.1000
    • 100:$2.9400
    NGTB40N60FL2WG
    DISTI # 863-NGTB40N60FL2WG
    ON SemiconductorIGBT Transistors 600V/40A FAST IGBT FSII T
    RoHS: Compliant
    162
    • 1:$5.0500
    • 10:$4.2900
    • 100:$3.7200
    • 250:$3.5300
    • 500:$3.1700
    • 1000:$2.6700
    • 2500:$2.5400
    NGTB40N60FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant
    930
    • 1000:$2.7900
    • 500:$2.9400
    • 100:$3.0600
    • 25:$3.1900
    • 1:$3.4300
    Bild Teil # Beschreibung
    IRS2113SPBF

    Mfr.#: IRS2113SPBF

    OMO.#: OMO-IRS2113SPBF

    Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
    FQA32N20C

    Mfr.#: FQA32N20C

    OMO.#: OMO-FQA32N20C

    MOSFET 200V N-Channel Advance Q-FET
    IRS2113SPBF

    Mfr.#: IRS2113SPBF

    OMO.#: OMO-IRS2113SPBF-INFINEON-TECHNOLOGIES

    Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
    FQA32N20C

    Mfr.#: FQA32N20C

    OMO.#: OMO-FQA32N20C-ON-SEMICONDUCTOR

    Darlington Transistors MOSFET 200V N-Channel Advance Q-FET
    Verfügbarkeit
    Aktie:
    162
    Auf Bestellung:
    2145
    Menge eingeben:
    Der aktuelle Preis von NGTB40N60FL2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,05 $
    5,05 $
    10
    4,29 $
    42,90 $
    100
    3,72 $
    372,00 $
    250
    3,53 $
    882,50 $
    500
    3,17 $
    1 585,00 $
    1000
    2,67 $
    2 670,00 $
    2500
    2,54 $
    6 350,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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