FDME1034CZT

FDME1034CZT
Mfr. #:
FDME1034CZT
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 20V Complementary PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDME1034CZT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDME1034CZT Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
UMLP-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
3.4 A
Rds On - Drain-Source-Widerstand:
66 mOhms, 142 mOhms
Vgs th - Gate-Source-Schwellenspannung:
700 mV, 600 mV
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
3 nC, 5.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.3 W
Aufbau:
Dual
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.55 mm
Länge:
1.6 mm
Serie:
FDME1034CZT
Transistortyp:
1 N-Channel, 1 P-Channel
Breite:
1.6 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
9 S, 7 S
Abfallzeit:
1.7 ns, 16 ns
Produktart:
MOSFET
Anstiegszeit:
2 ns, 4.8 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns, 33 ns
Typische Einschaltverzögerungszeit:
4.5 ns, 4.7 ns
Gewichtseinheit:
0.000889 oz
Tags
FDME103, FDME1, FDME, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N/P-Channel 20 V 160/530 mOhm 4.2/7.7 nC 1.4 W Mosfet MICROFET 1.6x1.6
***r Electronics
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET,NP CH,W,20V,MICROFET1.6X1.6; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.4W
***rchild Semiconductor
This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
FDME10xx / FDFME2P PowerTrench® MOSFETs
ON Semiconductor FDME10xx and FDFME2P PowerTrench® MOSFETs are designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. The  FDME1023PZT features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The FDME1024NZT is a dual N-Channel device with low on-state resistance for minimum conduction losses. The FDME1034CZT is a complementary PowerTrench device with an independent N-Channel and P-Channel MOSFET with low on-state resistance. The FDME1034CZT is minimized to allow high frequency switching directly from the controlling device. The FDFME2P PowerTrench device features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDME1034CZT
DISTI # V72:2272_06337946
ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R2981
  • 1000:$0.2698
  • 500:$0.3352
  • 100:$0.3353
  • 25:$0.5118
  • 10:$0.5121
  • 1:$0.6075
FDME1034CZT
DISTI # V36:1790_06337946
ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R0
    FDME1034CZT
    DISTI # FDME1034CZTFSCT-ND
    ON SemiconductorMOSFET N/P-CH 20V 6-MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    9571In Stock
    • 1000:$0.3082
    • 500:$0.3852
    • 100:$0.5200
    • 10:$0.6740
    • 1:$0.7700
    FDME1034CZT
    DISTI # FDME1034CZTFSDKR-ND
    ON SemiconductorMOSFET N/P-CH 20V 6-MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    9571In Stock
    • 1000:$0.3082
    • 500:$0.3852
    • 100:$0.5200
    • 10:$0.6740
    • 1:$0.7700
    FDME1034CZT
    DISTI # FDME1034CZTFSTR-ND
    ON SemiconductorMOSFET N/P-CH 20V 6-MICROFET
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)
    5000In Stock
    • 5000:$0.2525
    FDME1034CZT
    DISTI # 26620468
    ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R35000
    • 5000:$0.2157
    FDME1034CZT
    DISTI # 14981334
    ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R5000
    • 5000:$0.2254
    FDME1034CZT
    DISTI # 25979808
    ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.6A 6-Pin MicroFET T/R2981
    • 1000:$0.2900
    • 500:$0.3603
    • 100:$0.3604
    • 27:$0.5502
    FDME1034CZT
    DISTI # FDME1034CZT
    ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R (Alt: FDME1034CZT)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Europe - 0
    • 5000:€0.3279
    • 10000:€0.2679
    • 20000:€0.2459
    • 30000:€0.2269
    • 50000:€0.2109
    FDME1034CZT
    DISTI # FDME1034CZT
    ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R (Alt: FDME1034CZT)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Asia - 0
    • 5000:$0.3400
    • 10000:$0.3269
    • 15000:$0.3148
    • 25000:$0.3036
    • 50000:$0.2931
    • 125000:$0.2833
    • 250000:$0.2787
    FDME1034CZT
    DISTI # FDME1034CZT
    ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R - Bulk (Alt: FDME1034CZT)
    RoHS: Not Compliant
    Min Qty: 1316
    Container: Bulk
    Americas - 0
    • 1316:$0.2089
    • 1318:$0.2069
    • 2634:$0.2049
    • 6580:$0.2019
    • 13160:$0.1969
    FDME1034CZT
    DISTI # FDME1034CZT
    ON SemiconductorTrans MOSFET N/P-CH 20V 3.4A/2.3A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDME1034CZT)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.2219
    • 10000:$0.2199
    • 20000:$0.2169
    • 30000:$0.2149
    • 50000:$0.2089
    FDME1034CZT
    DISTI # 92R5541
    ON SemiconductorMOSFET Transistor, N and P Channel, 3.8 A, 20 V, 0.055 ohm, 4.5 V, 700 mV0
    • 50000:$0.2230
    • 25000:$0.2350
    • 10000:$0.2600
    • 5000:$0.2940
    • 1:$0.2960
    FDME1034CZT
    DISTI # 512-FDME1034CZT
    ON SemiconductorMOSFET 20V Complementary PowerTrench
    RoHS: Compliant
    7068
    • 1:$0.6300
    • 10:$0.5270
    • 100:$0.3400
    • 1000:$0.2720
    • 5000:$0.2300
    • 10000:$0.2220
    • 25000:$0.2130
    FDME1034CZTON SemiconductorSmall Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    4473
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    FDME1034CZTFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    191954
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    FDME1034CZT
    DISTI # 7599147P
    ON SemiconductorMOSFET N/P-CH 20V 3.4A/2.3A MICROFET6, RL260
    • 2500:£0.1880
    • 500:£0.1920
    • 125:£0.1960
    Bild Teil # Beschreibung
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    LDO Voltage Regulators 250mA Ultra-Lo Noise LDO Reg
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    OMO.#: OMO-TLV3702IDGKR-TEXAS-INSTRUMENTS

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    Operational Amplifiers - Op Amps Lo Noise 50uV R-R Inp/Out Prec Op Amp
    DRV5055A2QDBZR

    Mfr.#: DRV5055A2QDBZR

    OMO.#: OMO-DRV5055A2QDBZR-TEXAS-INSTRUMENTS

    Hall Effect Sensor 1mA Ratiometric 3.3V/5V
    LP5907SNX-3.0/NOPB

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    Verfügbarkeit
    Aktie:
    588
    Auf Bestellung:
    2571
    Menge eingeben:
    Der aktuelle Preis von FDME1034CZT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,63 $
    0,63 $
    10
    0,53 $
    5,27 $
    100
    0,34 $
    34,00 $
    1000
    0,27 $
    272,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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