STGB40V60F

STGB40V60F
Mfr. #:
STGB40V60F
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGB40V60F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGB40V60F Mehr Informationen STGB40V60F Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
D2PAK
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
283 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGB40V60F
Verpackung:
Spule
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Gewichtseinheit:
0.070548 oz
Tags
STGB4, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***i-Key
IGBT 600V 80A 283W D2PAK
***ark
Ptd High Voltage
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Teil # Mfg. Beschreibung Aktie Preis
STGB40V60F
DISTI # 497-14978-2-ND
STMicroelectronicsIGBT 600V 80A 283W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 2000:$2.4645
  • 1000:$2.5730
STGB40V60F
DISTI # 497-14978-1-ND
STMicroelectronicsIGBT 600V 80A 283W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$3.0860
  • 100:$3.5721
  • 10:$4.2930
  • 1:$4.7400
STGB40V60F
DISTI # 497-14978-6-ND
STMicroelectronicsIGBT 600V 80A 283W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$3.0860
  • 100:$3.5721
  • 10:$4.2930
  • 1:$4.7400
STGB40V60F
DISTI # STGB40V60F
STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin D2PAK T/R (Alt: STGB40V60F)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.6900
  • 2000:€1.5900
  • 4000:€1.5900
  • 6000:€1.4900
  • 10000:€1.3900
STGB40V60F
DISTI # STGB40V60F
STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB40V60F)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.2900
  • 2000:$2.1900
  • 4000:$2.0900
  • 6000:$1.9900
  • 10000:$1.8900
STGB40V60F
DISTI # 511-STGB40V60F
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
RoHS: Compliant
0
  • 1:$4.1000
  • 10:$3.4800
  • 100:$3.0200
  • 250:$2.8600
  • 500:$2.5700
  • 1000:$2.1700
  • 2000:$2.0600
Bild Teil # Beschreibung
STGB40H65FB

Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2

IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2-STMICROELECTRONICS

TRENCH GATE FIELD-STOP IGBT, M S
STGB40H65FB

Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB-STMICROELECTRONICS

IGBT BIPO 650V 40A D2PAK
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von STGB40V60F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,10 $
4,10 $
10
3,48 $
34,80 $
100
3,02 $
302,00 $
250
2,86 $
715,00 $
500
2,57 $
1 285,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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