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SKM150GB123D

SKM150GB123D
Mfr. #:
SKM150GB123D
Hersteller:
SEMIKRON
Beschreibung:
POWER IGBT TRANSISTOR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM150GB123D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SEMIKRON
Produktkategorie
IC-Chips
Tags
SKM150GB12, SKM150GB1, SKM150GB, SKM150G, SKM150, SKM15, SKM1, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Distributors Inc.
IGBT halfbridge standard 1200(V) 150(A)
***omponent
SKM150GB123D power transistor module
***hardson RFPD
POWER IGBT TRANSISTOR
***ment14 APAC
IGBT MODULE, 1.2KV, 150A, SEMITRANS 3; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C
***ark
IGBT Module; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):3V; Package/Case:D56; Collector Emitter Voltage, V(br)ceo:1200V ;RoHS Compliant: Yes
***ikron
not recommended for new design Features: MOS input (voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Large clearance (12 mm) and creepage distances (20 mm) Typical Applications: AC inverter drives UPS
Teil # Mfg. Beschreibung Aktie Preis
SKM150GB123D
DISTI # SKM150GB123D		SEMIKRONPOWER IGBT TRANSISTOR
RoHS: Compliant		0
    Bild Teil # Beschreibung
    SKM150GAL121D

    Mfr.#: SKM150GAL121D

    OMO.#: OMO-SKM150GAL121D-1190

    		 Neu und Original
    SKM150GAR121D

    Mfr.#: SKM150GAR121D

    OMO.#: OMO-SKM150GAR121D-1190

    		 Neu und Original
    SKM150GAR123D

    Mfr.#: SKM150GAR123D

    OMO.#: OMO-SKM150GAR123D-1190

    		 Neu und Original
    SKM150GAR12T4

    Mfr.#: SKM150GAR12T4

    OMO.#: OMO-SKM150GAR12T4-1190

    		 IGBT Array & Module Transistor, NPN, 232 A, 1.8 V, 1.2 kV, SEMITRANS 2 RoHS Compliant: Yes
    SKM150GB063D

    Mfr.#: SKM150GB063D

    OMO.#: OMO-SKM150GB063D-1190

    		 POWER IGBT TRANSISTOR
    SKM150GB066D

    Mfr.#: SKM150GB066D

    OMO.#: OMO-SKM150GB066D-1190

    		 Neu und Original
    SKM150GB123D

    Mfr.#: SKM150GB123D

    OMO.#: OMO-SKM150GB123D-1190

    		 POWER IGBT TRANSISTOR
    SKM150GB124D

    Mfr.#: SKM150GB124D

    OMO.#: OMO-SKM150GB124D-1190

    		 Neu und Original
    SKM150GB124DE

    Mfr.#: SKM150GB124DE

    OMO.#: OMO-SKM150GB124DE-1190

    		 Neu und Original
    SKM150GB128D

    Mfr.#: SKM150GB128D

    OMO.#: OMO-SKM150GB128D-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SKM150GB123D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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