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S29GL01GS11TFV010

S29GL01GS11TFV010
Mfr. #:
S29GL01GS11TFV010
Hersteller:
Cypress Semiconductor
Beschreibung:
Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL01GS11TFV010 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
S29GL01GS11TFV010 Mehr Informationen S29GL01GS11TFV010 Product Details
Produkteigenschaft
Attributwert
Hersteller
Cypress Semiconductor Corp
Produktkategorie
Erinnerung
Serie
GL-S
Verpackung
Tray Alternative Verpackung
Montageart
SMD/SMT
Betriebstemperaturbereich
- 40 C to + 105 C
Paket-Koffer
TSOP-56
Betriebstemperatur
-40°C ~ 105°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
2.7 V ~ 3.6 V
Lieferanten-Geräte-Paket
56-TSOP
Speichergröße
1G (64M x 16)
Speichertyp
FLASH - NOR
Geschwindigkeit
110ns
Die Architektur
MirrorBit Eclipse
Format-Speicher
BLITZ
Standard
Common Flash-Schnittstelle (CFI)
Oberflächentyp
Parallel
Organisation
128 M x 8
Versorgungsstrom-Max
100 mA
Daten-Bus-Breite
8 bit
Versorgungsspannung-Max
3.6 V
Versorgungsspannung-Min
2.7 V
Timing-Typ
Asynchron
Tags
S29GL01GS11TFV, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS
***ical
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 56-Pin TSOP Tray
***ark
TRAY PKGED / 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Teil # Mfg. Beschreibung Aktie Preis
IS29GL01GS-11TFV010
DISTI # IS29GL01GS-11TFV010-ND		Cypress SemiconductorIC FLASH 1G PARALLEL
RoHS: Compliant
Min Qty: 91
Container: Tray		Limited Supply - Call
    S29GL01GS11TFV010
    DISTI # S29GL01GS11TFV010-ND    		Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
    RoHS: Compliant
    Min Qty: 91
    Container: Tray    		Temporarily Out of Stock
    • 91:$10.9708
    S29GL01GS11TFV010
    DISTI # 727-S29GL01GS11TFV01    		Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant    		41
    • 1:$14.1000
    • 10:$12.8200
    • 25:$11.8600
    • 50:$10.9000
    IS29GL01GS-11TFV010
    DISTI # 727-IS29GL01GSTFV010    		Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      S29GL01GT11FHIV40

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      OMO.#: OMO-S29GL01GT11DHV010

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      		 IC FLASH 1G PARALLEL GL-T
      S29GL01GT10DHI020

      Mfr.#: S29GL01GT10DHI020

      OMO.#: OMO-S29GL01GT10DHI020-CYPRESS-SEMICONDUCTOR

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      S29GL01GT12TFN013

      Mfr.#: S29GL01GT12TFN013

      OMO.#: OMO-S29GL01GT12TFN013-CYPRESS-SEMICONDUCTOR

      		 Flash Memory 1 GBIT, 3V, 100NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von S29GL01GS11TFV010 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      16,35 $
      16,35 $
      10
      15,53 $
      155,33 $
      100
      14,72 $
      1 471,50 $
      500
      13,90 $
      6 948,75 $
      1000
      13,08 $
      13 080,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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