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IRF6716MTRPBF

IRF6716MTRPBF
Mfr. #:
IRF6716MTRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6716MTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6716MTRPBF DatasheetIRF6716MTRPBF Datasheet (P4-P6)IRF6716MTRPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MX
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
39 A
Rds On - Drain-Source-Widerstand:
2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
39 nC
Pd - Verlustleistung:
78 W
Aufbau:
Single
Handelsname:
DirektFET
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Breite:
5.05 mm
Marke:
Infineon-Technologien
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
4800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001528284
Tags
IRF6716M, IRF6716, IRF671, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH Si 25V 39A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N Channel, MOSFET, 25V, 39A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, N-Ch, VDSS 25V, RDS(ON) 1.3 mOhm, ID 24A, DirectFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2.8W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:34A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:270A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.4V
***ical
Trans MOSFET N-CH 25V 35A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 35 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 25V, 213A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 213A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance; Integrated Monolithic Sckottky Diode | Target Applications: MultiPhase SyncFET
***ure Electronics
Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRF6716MTRPBF
DISTI # 30719930		Infineon Technologies AGTrans MOSFET N-CH Si 25V 39A 7-Pin Direct-FET MX T/R
RoHS: Compliant		4800
  • 9600:$1.0176
  • 4800:$1.0752
IRF6716MTRPBF
DISTI # IRF6716MTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4821In Stock
  • 1000:$1.2650
  • 500:$1.5267
  • 100:$1.9629
  • 10:$2.4430
  • 1:$2.7000
IRF6716MTRPBF
DISTI # IRF6716MTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4821In Stock
  • 1000:$1.2650
  • 500:$1.5267
  • 100:$1.9629
  • 10:$2.4430
  • 1:$2.7000
IRF6716MTRPBF
DISTI # IRF6716MTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		4800In Stock
  • 4800:$1.1011
IRF6716MTRPBF
DISTI # C1S322000579606		Infineon Technologies AGMOSFETs4800
  • 4800:$1.1700
IRF6716MTRPBF
DISTI # IRF6716MTRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 7-Pin Direct-FET MX T/R - Tape and Reel (Alt: IRF6716MTRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Reel		Americas - 0
  • 4800:$1.1089
  • 9600:$1.0689
  • 19200:$1.0299
  • 28800:$0.9959
  • 48000:$0.9779
IRF6716MTRPBF
DISTI # IRF6716MTRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 39A 7-Pin Direct-FET MX T/R (Alt: IRF6716MTRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel		Asia - 0
    IRF6716MTRPBF
    DISTI # 91Y4748    		Infineon Technologies AGMOSFET, N-CH, 25V, 180A, DIRECTFET MX,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V,Power RoHS Compliant: Yes0
      IRF6716MTRPBF
      DISTI # 70019602      		Infineon Technologies AG600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A D2-PAK PACKAGE
      RoHS: Compliant      		0
      • 4800:$1.2640
      • 9600:$1.2390
      • 24000:$1.2010
      IRF6716MTRPBF
      DISTI # 942-IRF6716MTRPBF      		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
      RoHS: Compliant      		0
      • 1:$2.2700
      • 10:$1.9300
      • 100:$1.5400
      • 500:$1.3500
      • 1000:$1.1200
      • 2500:$1.0400
      • 4800:$1.0100
      IRF6716MTRPBF
      DISTI # IRF6716MTRPBF      		Infineon Technologies AGN-Ch 25V 180A 78W 0,0016R MX
      RoHS: Compliant      		0
      • 10:€1.3800
      • 50:€1.1800
      • 200:€1.0800
      • 500:€1.0400
      Bild Teil # Beschreibung
      IRF6715MTRPBF

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      IRF6718L2TRPBF

      Mfr.#: IRF6718L2TRPBF

      OMO.#: OMO-IRF6718L2TRPBF

      		 MOSFET 25V 1 N-CH HEXFET 0.7mOhms 64nC
      IRF6716MTRPBF

      Mfr.#: IRF6716MTRPBF

      OMO.#: OMO-IRF6716MTRPBF

      		 MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
      IRF6710S2TRPBF

      Mfr.#: IRF6710S2TRPBF

      OMO.#: OMO-IRF6710S2TRPBF

      		 MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
      IRF6716MTR1PBF

      Mfr.#: IRF6716MTR1PBF

      OMO.#: OMO-IRF6716MTR1PBF

      		 MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
      IRF6711STR1PBF

      Mfr.#: IRF6711STR1PBF

      OMO.#: OMO-IRF6711STR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 19A DIRECTFET-SQ
      IRF6710S2TR1PBF

      Mfr.#: IRF6710S2TR1PBF

      OMO.#: OMO-IRF6710S2TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 12A DIRECTFET
      IRF6712STRPBF.

      Mfr.#: IRF6712STRPBF.

      OMO.#: OMO-IRF6712STRPBF--1190

      		 Neu und Original
      IRF6716MTR1PBF

      Mfr.#: IRF6716MTR1PBF

      OMO.#: OMO-IRF6716MTR1PBF-INFINEON-TECHNOLOGIES

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      IRF6712STRPBF

      Mfr.#: IRF6712STRPBF

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      		 Darlington Transistors MOSFET 25V SINGLE N-CH 20V VGS HEXFET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von IRF6716MTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,27 $
      2,27 $
      10
      1,93 $
      19,30 $
      100
      1,54 $
      154,00 $
      500
      1,35 $
      675,00 $
      1000
      1,12 $
      1 120,00 $
      2500
      1,04 $
      2 600,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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