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DF1000R17IE4BOSA1

DF1000R17IE4BOSA1
Mfr. #:
DF1000R17IE4BOSA1
Hersteller:
Infineon Technologies
Beschreibung:
Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DF1000R17IE4BOSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
DF1000, DF100, DF10, DF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
***et Europe
IGBT Module N-Ch 1700V 1000A 12-pin PRIME3-1
***pNet
IGBT Module Trans Polarity N-Ch 1000A;1.7kV
***i-Key
IGBT MODULE 1700V 1000A
***ark
IGBT Module; Transistor Polarity:N Channel; DC Collector Current:1000A; Collector Emitter Voltage Vces:1.7kV; Power Dissipation Pd:6.25kW; No. of Pins:12; Collector Emitter Saturation Voltage Vce(sat):2V; Module Configuration:Chopper;RoHS Compliant: Yes
***nell
IGBT,HI PO CHOP,1700V,1000A,PRIMEPACK; Transistor Polarity:N Channel; DC Collector Current:1000A; Collector Emitter Voltage Vces:2V; Power Dissipation Max:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:12
***ment14 APAC
IGBT, HI PO CHOP, 1700V, 1000A, PRIM; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:1000A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:6.25kW
***ineon
1700V PrimePACK3 chopper IGBT module with IGBT4 and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Current Density; Low Switching Losses; V(vj op) = 150C; Low V(cesat); Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Copper Base Plate; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups
Teil # Mfg. Beschreibung Aktie Preis
DF1000R17IE4BOSA1
DISTI # 33718100		Infineon Technologies AGTrans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray2
  • 2:$504.7615
  • 1:$511.6760
DF1000R17IE4BOSA1
DISTI # DF1000R17IE4BOSA1-ND		Infineon Technologies AGIGBT MODULE 1700V 1000A
RoHS: Not compliant
Min Qty: 2
Container: Bulk		Temporarily Out of Stock
  • 2:$540.0850
DF1000R17IE4BOSA1
DISTI # DF1000R17IE4BOSA1		Infineon Technologies AGIGBT Module N-Ch 1700V 1000A 12-pin PRIME3-1 - Trays (Alt: DF1000R17IE4BOSA1)
RoHS: Compliant
Min Qty: 2
Container: Tray		Americas - 0
  • 20:$489.1900
  • 12:$501.2900
  • 8:$513.9900
  • 4:$527.2900
  • 2:$534.2900
DF1000R17IE4
DISTI # 641-DF1000R17IE4		Infineon Technologies AGIGBT Modules IGBT MODULES 1700V 1000A3
  • 1:$548.2400
  • 5:$515.2000
Bild Teil # Beschreibung
DF1000R17IE4D_B2

Mfr.#: DF1000R17IE4D_B2

OMO.#: OMO-DF1000R17IE4D-B2

 IGBT Modules
DF1000R17IE4

Mfr.#: DF1000R17IE4

OMO.#: OMO-DF1000R17IE4

 IGBT Modules IGBT MODULES 1700V 1000A
DF1000R17IE4BOSA1

Mfr.#: DF1000R17IE4BOSA1

OMO.#: OMO-DF1000R17IE4BOSA1-INFINEON-TECHNOLOGIES

 Trans IGBT Module N-CH 1700V 1.39KA 6250mW Automotive 12-Pin PRIME3-1 Tray
DF1000R17IE4DB2BOSA1

Mfr.#: DF1000R17IE4DB2BOSA1

OMO.#: OMO-DF1000R17IE4DB2BOSA1-INFINEON-TECHNOLOGIES

 IGBT MODULE 1700V 1000A
DF1000R17IE4D_B2

Mfr.#: DF1000R17IE4D_B2

OMO.#: OMO-DF1000R17IE4D-B2-125

 IGBT Modules
DF1000R17IE4

Mfr.#: DF1000R17IE4

OMO.#: OMO-DF1000R17IE4-125

 IGBT Modules IGBT MODULES 1700V 1000A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von DF1000R17IE4BOSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
773,84 $
773,84 $
10
735,14 $
7 351,43 $
100
696,45 $
69 645,15 $
500
657,76 $
328 879,90 $
1000
619,07 $
619 068,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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