GS81302TT20E-500

GS81302TT20E-500
Mfr. #:
GS81302TT20E-500
Hersteller:
GSI Technology
Beschreibung:
SRAM 1.8 or 1.5V 8M x 18 144M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS81302TT20E-500 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS81302TT20E-500 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
N
Speichergröße:
144 Mbit
Organisation:
8 M x 18
Maximale Taktfrequenz:
500 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.9 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
1.07 A
Minimale Betriebstemperatur:
0 C
Maximale Betriebstemperatur:
+ 70 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-165
Verpackung:
Tablett
Speichertyp:
DDR-II
Serie:
GS81302TT20E
Typ:
SigmaDDR-II+
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
10
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SigmaDDR-II+
Tags
GS81302TT20E, GS81302TT2, GS81302TT, GS81302T, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
SRAM Chip Sync Single 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Bild Teil # Beschreibung
GS81302T09GE-333

Mfr.#: GS81302T09GE-333

OMO.#: OMO-GS81302T09GE-333

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T10E-333I

Mfr.#: GS81302T10E-333I

OMO.#: OMO-GS81302T10E-333I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T11GE-400

Mfr.#: GS81302T11GE-400

OMO.#: OMO-GS81302T11GE-400

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T37E-333

Mfr.#: GS81302T37E-333

OMO.#: OMO-GS81302T37E-333

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302T20GE-350

Mfr.#: GS81302T20GE-350

OMO.#: OMO-GS81302T20GE-350

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T20GE-500I

Mfr.#: GS81302T20GE-500I

OMO.#: OMO-GS81302T20GE-500I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302T37E-450I

Mfr.#: GS81302T37E-450I

OMO.#: OMO-GS81302T37E-450I

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT10E-333

Mfr.#: GS81302TT10E-333

OMO.#: OMO-GS81302TT10E-333

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302T09E-350

Mfr.#: GS81302T09E-350

OMO.#: OMO-GS81302T09E-350

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302TT07E-400

Mfr.#: GS81302TT07E-400

OMO.#: OMO-GS81302TT07E-400

SRAM 1.8 or 1.5V 16M x 8 144M
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1993
Menge eingeben:
Der aktuelle Preis von GS81302TT20E-500 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
161,54 $
161,54 $
25
150,00 $
3 750,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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