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FDMD8530

FDMD8530
Mfr. #:
FDMD8530
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 30V Dual N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMD8530 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
201 A
Rds On - Drain-Source-Widerstand:
1.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
106 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench Power Clip
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMD8530
Transistortyp:
2 N-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
259 S
Abfallzeit:
21 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
71 ns
Typische Einschaltverzögerungszeit:
14 ns
Gewichtseinheit:
0.003346 oz
Tags
FDMD85, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 30V 201A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 201A, 1.25mΩ
***nell
MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 201A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 770µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vg
***r Electronics
Power Field-Effect Transistor, 201A I(D), 30V, 0.00125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two 30V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
***emi
N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
***ure Electronics
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
***rchild Semiconductor
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
***Yang
Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin PowerFLAT T/R - Tape and Reel
***ure Electronics
Dual N-Channel 30 V 18 mOhm SMT STripFET™ V Power MosFet - PowerFLAT 5x6
***icroelectronics
Automotive-grade dual N-channel 30 V, 0.016 Ohm typ., 11 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package
***ark
Mosfet, Dual N Ch, 30V, 11A, Powerflat; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 25V 32A 8-Pin Power 56 T/R
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rSyncFET Schottky Body Diode DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
***ineon
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
***(Formerly Allied Electronics)
IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK
***ure Electronics
Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***nell
MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
***ark
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
***nell
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Teil # Mfg. Beschreibung Aktie Preis
FDMD8530
DISTI # V72:2272_16119252		ON Semiconductor30V DUAL N-CHANNEL POWERTRENCH2980
  • 1000:$0.8098
  • 500:$0.9763
  • 250:$1.0628
  • 100:$1.1754
  • 25:$1.3150
  • 10:$1.4611
  • 1:$1.7095
FDMD8530
DISTI # V36:1790_16119252		ON Semiconductor30V DUAL N-CHANNEL POWERTRENCH0
  • 3000000:$0.6838
  • 1500000:$0.6841
  • 300000:$0.7109
  • 30000:$0.7588
  • 3000:$0.7669
FDMD8530
DISTI # FDMD8530CT-ND		ON SemiconductorMOSFET 2N-CH 30V 35A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4116In Stock
  • 1000:$0.9205
  • 500:$1.1110
  • 100:$1.3522
  • 10:$1.6820
  • 1:$1.8700
FDMD8530
DISTI # FDMD8530DKR-ND		ON SemiconductorMOSFET 2N-CH 30V 35A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4116In Stock
  • 1000:$0.9205
  • 500:$1.1110
  • 100:$1.3522
  • 10:$1.6820
  • 1:$1.8700
FDMD8530
DISTI # FDMD8530TR-ND		ON SemiconductorMOSFET 2N-CH 30V 35A
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.8013
  • 3000:$0.8321
FDMD8530
DISTI # 32625891		ON Semiconductor30V DUAL N-CHANNEL POWERTRENCH2980
  • 8:$1.7095
FDMD8530
DISTI # FDMD8530		ON SemiconductorTrans MOSFET N-CH 30V/30V 35A/35A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD8530)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 18000
  • 30000:$0.7239
  • 18000:$0.7429
  • 12000:$0.7519
  • 6000:$0.7619
  • 3000:$0.7669
FDMD8530
DISTI # FDMD8530		ON SemiconductorTrans MOSFET N-CH 30V/30V 35A/35A 8-Pin PQFN T/R (Alt: FDMD8530)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.6799
  • 18000:€0.7289
  • 12000:€0.7849
  • 6000:€0.8499
  • 3000:€1.0199
FDMD8530
DISTI # 84Y5828		ON SemiconductorMOSFET, DUAL N-CH, 30V, 201A, PQFN-8L,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:201A,Drain Source Voltage Vds:30V,On Resistance Rds(on):770µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes1840
  • 1000:$0.8610
  • 500:$1.0400
  • 250:$1.1200
  • 100:$1.1900
  • 50:$1.2900
  • 25:$1.3900
  • 10:$1.4800
  • 1:$1.7500
FDMD8530.
DISTI # 96AC0020		ON SemiconductorFET 30V 1.25 MOHM PQFN56 ROHS COMPLIANT: YES12000
  • 30000:$0.7240
  • 18000:$0.7430
  • 12000:$0.7520
  • 6000:$0.7620
  • 1:$0.7670
FDMD8530
DISTI # 512-FDMD8530		ON SemiconductorMOSFET 30V Dual N-Channel PowerTrench MOSFET
RoHS: Compliant		5466
  • 1:$1.7300
  • 10:$1.4700
  • 100:$1.1800
  • 500:$1.0300
  • 1000:$0.8520
  • 3000:$0.7930
  • 6000:$0.7640
  • 9000:$0.7340
FDMD8530ON SemiconductorPOWER FIELD-EFFECT TRANSISTOR2
    FDMD8530
    DISTI # 2565204    		ON SemiconductorMOSFET, DUAL N-CH, 30V, 201A, PQFN-8L
    RoHS: Compliant    		1435
    • 1000:$1.4800
    • 500:$1.7900
    • 100:$2.2900
    • 10:$2.8500
    • 1:$3.1500
    FDMD8530
    DISTI # 2565204    		ON SemiconductorMOSFET, DUAL N-CH, 30V, 201A, PQFN-8L1435
    • 500:£0.7460
    • 250:£0.8010
    • 100:£0.8550
    • 25:£1.0600
    • 5:£1.1700
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von FDMD8530 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,73 $
    1,73 $
    10
    1,47 $
    14,70 $
    100
    1,18 $
    118,00 $
    500
    1,03 $
    515,00 $
    1000
    0,85 $
    852,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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