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BSF024N03LT3G

BSF024N03LT3G
Mfr. #:
BSF024N03LT3G
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSF024N03LT3G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BSF0, BSF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 15A 8-Pin CanPAK
***ronik
N-CH 30V 106A 2mOhm WDSON-2 RoHSconf
***el Electronic
Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
***ineon SCT
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
*** Electronics
MOSFET N-CH 25V 80A TO-263
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
***Yang
Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402
***nell
MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***i-Key
MOSFET N-CH 30V 71A D2PAK
***Yang
TRANS MOSFET N-CH 30V 71A 3PIN TO-263 - Bulk
***ser
MOSFETs 30V N-Ch PowerTrench MOSFET
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Chip Resistor - Surface Mount 63.4kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 63.4K OHM 1% 1/10W 0402
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263AB ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ponent Stockers USA
20 A 30 V 0.0217 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***i-Key
MOSFET N-CH 30V 20A TO263-3
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
N-KANAL POWER MOS
Teil # Mfg. Beschreibung Aktie Preis
BSF024N03LT3GXUMA1
DISTI # BSF024N03LT3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 106A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5000In Stock
  • 1000:$0.8040
  • 500:$1.0184
  • 100:$1.3132
  • 10:$1.6620
  • 1:$1.8800
BSF024N03LT3GXUMA1
DISTI # BSF024N03LT3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 106A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5000In Stock
  • 1000:$0.8040
  • 500:$1.0184
  • 100:$1.3132
  • 10:$1.6620
  • 1:$1.8800
BSF024N03LT3GXUMA1
DISTI # BSF024N03LT3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 106A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSF024N03LT3 G
    DISTI # 726-BSF024N03LT3G    		Infineon Technologies AGMOSFET N-Ch 30V 106A CanPAK3 ST OptiMOS 3
    RoHS: Compliant    		0
      BSF024N03LT3GInfineon Technologies AGPower Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		19963
      • 1000:$0.5000
      • 500:$0.5300
      • 100:$0.5500
      • 25:$0.5700
      • 1:$0.6200
      Bild Teil # Beschreibung
      BSF024N03LT3G

      Mfr.#: BSF024N03LT3G

      OMO.#: OMO-BSF024N03LT3G-1190

      		 Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSF024N03LT3GXUMA1

      Mfr.#: BSF024N03LT3GXUMA1

      OMO.#: OMO-BSF024N03LT3GXUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 106A 2WDSON
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von BSF024N03LT3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,75 $
      0,75 $
      10
      0,71 $
      7,12 $
      100
      0,68 $
      67,50 $
      500
      0,64 $
      318,75 $
      1000
      0,60 $
      600,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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