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IXGR40N120B2D1

IXGR40N120B2D1
Mfr. #:
IXGR40N120B2D1
Hersteller:
IXYS
Beschreibung:
IGBT 1200V ISOPLUS247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXGR40N120B2D1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IXGR40, IXGR4, IXGR, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1200V ISOPLUS247
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***(Formerly Allied Electronics)
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
***p One Stop Global
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***p One Stop
Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC
***ineon SCT
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 1.7 V Current release time: 1000 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 1200V, 57A, TO-247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.47V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:57A; Current Temperature:25°C; Device Marking:IRG4PH50S; Fall Time Max:638ns; Full Power Rating Temperature:25°C; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:114A; Rise Time:29ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***ical
Trans IGBT Chip N-CH 1200V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
7 A, 1200 V very fast IGBT with Ultrafast diode
***r Electronics
Insulated Gate Bipolar Transistor, 6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS - STGF3NC120HD - IGBT, N 1200V 3A TO-220FP
***nell
IGBT, N 1200V 3A TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220FP; No. of Pins: 3Pins
***ical
Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
***eco
Transistor IGBT Chip N Channel 1.2k Volt 50 Amp 3-Pin 3+ Tab TO-3PN Rail
***ure Electronics
FGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN
***el Electronic
In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P
***ment14 APAC
IGBT, NPT, TO-3PN; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312mW; Pulsed Current Icm:90A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***th Star Micro
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Teil # Mfg. Beschreibung Aktie Preis
IXGR40N120B2D1
DISTI # IXGR40N120B2D1-ND		IXYS CorporationIGBT 1200V ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$13.2090
Bild Teil # Beschreibung
IXGR40N60C2

Mfr.#: IXGR40N60C2

OMO.#: OMO-IXGR40N60C2-IXYS-CORPORATION

 IGBT 600V 56A 170W ISOPLUS247
IXGR40N60C2D1

Mfr.#: IXGR40N60C2D1

OMO.#: OMO-IXGR40N60C2D1-IXYS-CORPORATION

 IGBT 600V 56A 170W ISOPLUS247
IXGR40N60CD1

Mfr.#: IXGR40N60CD1

OMO.#: OMO-IXGR40N60CD1-IXYS-CORPORATION

 IGBT 600V 75A 200W ISOPLUS247
IXGR40N60CDI

Mfr.#: IXGR40N60CDI

OMO.#: OMO-IXGR40N60CDI-1190

 Neu und Original
IXGR40N60B

Mfr.#: IXGR40N60B

OMO.#: OMO-IXGR40N60B-IXYS-CORPORATION

 IGBT 600V 70A 200W ISOPLUS247
IXGR40N60B2

Mfr.#: IXGR40N60B2

OMO.#: OMO-IXGR40N60B2-IXYS-CORPORATION

 IGBT 600V 60A 167W ISOPLUS247
IXGR40N60BD1

Mfr.#: IXGR40N60BD1

OMO.#: OMO-IXGR40N60BD1-IXYS-CORPORATION

 IGBT 600V 70A 200W ISOPLUS247
IXGR40N120A2D1

Mfr.#: IXGR40N120A2D1

OMO.#: OMO-IXGR40N120A2D1-IXYS-CORPORATION

 IGBT 1200V ISOPLUS247
IXGR40N120B2D1

Mfr.#: IXGR40N120B2D1

OMO.#: OMO-IXGR40N120B2D1-IXYS-CORPORATION

 IGBT 1200V ISOPLUS247
IXGR40N60B2D1

Mfr.#: IXGR40N60B2D1

OMO.#: OMO-IXGR40N60B2D1-IXYS-CORPORATION

 IGBT 600V 60A 167W ISOPLUS247
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IXGR40N120B2D1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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