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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FQB58N08TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | Europe - 800 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FQB5N20LTM |
MOSFET N-CH 200V 4.5A D2PAK |
|
Mfr.#: FQB5N40 OMO.#: OMO-FQB5N40-1190 |
Neu und Original |
|
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Mfr.#: FQB5N40TM-NL OMO.#: OMO-FQB5N40TM-NL-1190 |
Neu und Original |
|
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Mfr.#: FQB5N50 OMO.#: OMO-FQB5N50-1190 |
Neu und Original |
|
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Mfr.#: FQB5N50C OMO.#: OMO-FQB5N50C-1190 |
Neu und Original |
|
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Mfr.#: FQB5N50CTM-NL OMO.#: OMO-FQB5N50CTM-NL-1190 |
Neu und Original |
|
|
Mfr.#: FQB5N60CTM |
MOSFET N-CH 600V 4.5A D2PAK |
|
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Mfr.#: FQB5N60TM |
MOSFET N-CH 600V 5A D2PAK |
|
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Mfr.#: FQB5P10TM |
MOSFET P-CH 100V 4.5A D2PAK |
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Mfr.#: FQB5N60CTM_WS OMO.#: OMO-FQB5N60CTM-WS-126 |
IGBT Transistors MOSFET 600V,4.5A NCH MOSFET |