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FGPF7N60RUFDTU

FGPF7N60RUFDTU
Mfr. #:
FGPF7N60RUFDTU
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 14A 41W TO220F
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGPF7N60RUFDTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FGPF7N, FGPF7, FGPF, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT 600V 14A 41W Through Hole TO-220F
***ser
IGBTs 600V, 7A, RUF, IGBT CO-PAK
***ment14 APAC
IGBT, CO-PAK, 600V, 7A, TO-220F; DC Collector Current:14A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:41W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic @ Vce Sat:7A; Current Ic Continuous a Max:7A; Current Temperature:25°C; Fall Time tf:170ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:TO-220F; Pin Configuration:With flywheel diode; Power Dissipation Max:41W; Power Dissipation Pd:41W; Power Dissipation Pd:41W; Pulsed Current Icm:21A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***et
IGBT 600V 14A 45W Through Hole TO-220F
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***et
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***ser
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Trans IGBT Chip N-CH 600V 11A 28000mW 3-Pin(3+Tab) TO-220FP Tube
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STMICROELECTRONICS STGF14NC60KD IGBT Single Transistor, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 Pins
***ark
IGBT, TO-220FP; Continuous Collector Current:11A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:28W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
***ical
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Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ark
N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***et
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***nell
IGBT, TO-220; DC Collector Current: 13A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ical
Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 7 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
FGPF7N60RUFDTU
DISTI # FGPF7N60RUFDTU-ND		ON SemiconductorIGBT 600V 14A 41W TO220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FGPF7N60RUFDTU
    DISTI # FGPF7N60RUFDTU    		ON SemiconductorIGBT 600V 14A 41W Through Hole TO-220F - Bulk (Alt: FGPF7N60RUFDTU)
    RoHS: Compliant
    Min Qty: 715
    Container: Bulk    		Americas - 0
    • 7150:$0.4319
    • 3575:$0.4429
    • 2145:$0.4479
    • 1430:$0.4539
    • 715:$0.4569
    FGPF7N60RUFDTU
    DISTI # 512-FGPF7N60RUFDTU    		ON SemiconductorMotor / Motion / Ignition Controllers & Drivers 600V 7A RUF IGBT CO-PAK
    RoHS: Compliant    		0
      FGPF7N60RUFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant      		2449
      • 1000:$0.4600
      • 500:$0.4900
      • 100:$0.5100
      • 25:$0.5300
      • 1:$0.5700
      FGPF7N60RUFDTU
      DISTI # 1324828      		ON SemiconductorIGBT, CO-PAK, 600V, 7A, TO-220F
      RoHS: Compliant      		0
      • 1000:$1.8900
      • 500:$1.9900
      • 250:$2.0900
      • 100:$2.6200
      • 10:$3.5500
      • 1:$4.3500
      Bild Teil # Beschreibung
      FGPF7N60LSDTU

      Mfr.#: FGPF7N60LSDTU

      OMO.#: OMO-FGPF7N60LSDTU

      		 Motor / Motion / Ignition Controllers & Drivers IGBT 600V 7A Low Sat CO-PAK
      FGPF7N60LSD

      Mfr.#: FGPF7N60LSD

      OMO.#: OMO-FGPF7N60LSD-1190

      		 Neu und Original
      FGPF7N60LSDTU

      Mfr.#: FGPF7N60LSDTU

      OMO.#: OMO-FGPF7N60LSDTU-ON-SEMICONDUCTOR

      		 IGBT 600V 14A 45W TO220F
      FGPF7N60RUFD

      Mfr.#: FGPF7N60RUFD

      OMO.#: OMO-FGPF7N60RUFD-1190

      		 Neu und Original
      FGPF7N60RUFDTU

      Mfr.#: FGPF7N60RUFDTU

      OMO.#: OMO-FGPF7N60RUFDTU-ON-SEMICONDUCTOR

      		 IGBT 600V 14A 41W TO220F
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von FGPF7N60RUFDTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,65 $
      0,65 $
      10
      0,62 $
      6,16 $
      100
      0,58 $
      58,31 $
      500
      0,55 $
      275,35 $
      1000
      0,52 $
      518,30 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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