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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMP13N60ES DISTI # FE0000000001013 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMP13N60ES-S25PP-P DISTI # FE0000000004595 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMP13N60ESC-P DISTI # FE0000000004596 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMP13N60ESSC DISTI # FE0000000004597 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMP13N60ESSC-P DISTI # FE0000000004598 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMP13N60E-S25PP-P DISTI # FE0000000004594 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: FMP13N60E OMO.#: OMO-FMP13N60E-1190 |
Power Field-Effect Transistor, 13AI(D),600V,0.58ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
|
Mfr.#: FMP13N60ES OMO.#: OMO-FMP13N60ES-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
|
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Mfr.#: FMP139S104 OMO.#: OMO-FMP139S104-700 |
D-Sub Contacts HIGH PWR CONTACT DIN |
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Mfr.#: FMP139S115 OMO.#: OMO-FMP139S115-700 |
D-Sub Contacts HIGH POWER DIN CONN |