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IRF3709ZSTRRPBF

IRF3709ZSTRRPBF
Mfr. #:
IRF3709ZSTRRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 87A D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3709ZSTRRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF3709ZSTRRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
79 W
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
87 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
7.8 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
17 nC
Tags
IRF3709ZST, IRF3709ZS, IRF3709Z, IRF3709, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF3709ZSTRRPBF
DISTI # V72:2272_13890152		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2258
  • 1000:$0.5349
  • 500:$0.5943
  • 250:$0.8585
  • 100:$0.9240
  • 25:$1.0717
  • 10:$1.1021
  • 1:$1.2458
IRF3709ZSTRRPBF
DISTI # IRF3709ZSTRRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 87A D2PAK
RoHS: Compliant
Min Qty: 3200
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3200:$0.7392
IRF3709ZSTRRPBF
DISTI # 31589370		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2258
  • 1000:$0.5349
  • 500:$0.5943
  • 250:$0.8585
  • 100:$0.9240
  • 25:$1.0717
  • 12:$1.1021
IRF3709ZSTRRPBF
DISTI # IRF3709ZSTRRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3709ZSTRRPBF)
RoHS: Compliant
Min Qty: 3200
Container: Reel		Americas - 0
  • 3200:$0.5529
  • 4800:$0.5329
  • 8000:$0.5139
  • 16000:$0.4959
  • 32000:$0.4869
IRF3709ZSTRRPBF
DISTI # 70019545		Infineon Technologies AGMOSFET,30V,87A,6.3 MOHM,17 NC QG,D2-PAK
RoHS: Compliant		0
  • 3200:$1.0840
  • 6400:$1.0620
  • 16000:$1.0300
IRF3709ZSTRRPBF
DISTI # 942-IRF3709ZSTRRPBF		Infineon Technologies AGMOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
RoHS: Compliant		0
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9130
  • 800:$0.7200
IRF3709ZSTRRPBF
DISTI # C1S322000705496		Infineon Technologies AGMOSFETs
RoHS: Compliant		2258
  • 800:$0.5574
Bild Teil # Beschreibung
IRF3709ZPBF

Mfr.#: IRF3709ZPBF

OMO.#: OMO-IRF3709ZPBF

 MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
IRF3709LPBF

Mfr.#: IRF3709LPBF

OMO.#: OMO-IRF3709LPBF

 MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
IRF3709STRR

Mfr.#: IRF3709STRR

OMO.#: OMO-IRF3709STRR-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 90A D2PAK
IRF3709ZCL

Mfr.#: IRF3709ZCL

OMO.#: OMO-IRF3709ZCL-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 87A TO-262
IRF3709ZCSTRL

Mfr.#: IRF3709ZCSTRL

OMO.#: OMO-IRF3709ZCSTRL-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 87A D2PAK
IRF3709ZCSTRR

Mfr.#: IRF3709ZCSTRR

OMO.#: OMO-IRF3709ZCSTRR-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 87A D2PAK
IRF3709STRRPBF

Mfr.#: IRF3709STRRPBF

OMO.#: OMO-IRF3709STRRPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 90A D2PAK
IRF3709ZSTRLPBF

Mfr.#: IRF3709ZSTRLPBF

OMO.#: OMO-IRF3709ZSTRLPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 87A D2PAK
IRF3709Z

Mfr.#: IRF3709Z

OMO.#: OMO-IRF3709Z-1190

 Neu und Original
IRF3709STRLPBF

Mfr.#: IRF3709STRLPBF

OMO.#: OMO-IRF3709STRLPBF-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IRF3709ZSTRRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,73 $
0,73 $
10
0,69 $
6,94 $
100
0,66 $
65,73 $
500
0,62 $
310,40 $
1000
0,58 $
584,30 $
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