BLS6G3135-120

BLS6G3135-120
Mfr. #:
BLS6G3135-120
Hersteller:
Ampleon
Beschreibung:
RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BLS6G3135-120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BLS6G3135-1, BLS6G3, BLS6, BLS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BLS6G3135-120,112
DISTI # BLS6G3135-120,112-ND
AmpleonRF FET LDMOS 60V 11DB SOT502A
RoHS: Compliant
Min Qty: 60
Container: Tray
Temporarily Out of Stock
  • 60:$321.7397
BLS6G3135-120,112
DISTI # 70R2902
AmpleonN CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 3100MHZ - 3500MHZ, 2-SOT-502B,Drain Source Voltage Vds:32V,Continuous Drain Current Id:7.2A,Power Dissipation Pd:120W,Operating Frequency Min:3.1GHz,Operating Frequency Max:3.5GHz,MSL:- RoHS Compliant: Yes0
    BLS6G3135-120NXP SemiconductorsRF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET289
    • 13:$327.0000
    • 9:$348.8000
    • 1:$381.5000
    Bild Teil # Beschreibung
    BLS6G3135-120112

    Mfr.#: BLS6G3135-120112

    OMO.#: OMO-BLS6G3135-120112-1190

    Neu und Original
    BLS6G3135-20

    Mfr.#: BLS6G3135-20

    OMO.#: OMO-BLS6G3135-20-1190

    Neu und Original
    BLS6G3135-20112

    Mfr.#: BLS6G3135-20112

    OMO.#: OMO-BLS6G3135-20112-1190

    Now Ampleon, BLS6G3135-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
    BLS6G3135S-120

    Mfr.#: BLS6G3135S-120

    OMO.#: OMO-BLS6G3135S-120-1190

    Neu und Original
    BLS6G3135S-120112

    Mfr.#: BLS6G3135S-120112

    OMO.#: OMO-BLS6G3135S-120112-1190

    BLS6G3135S-120/SOT502/TRAY
    BLS6G3135S-20

    Mfr.#: BLS6G3135S-20

    OMO.#: OMO-BLS6G3135S-20-1190

    Neu und Original
    BLS6G3135S-20112

    Mfr.#: BLS6G3135S-20112

    OMO.#: OMO-BLS6G3135S-20112-1190

    Now Ampleon, BLS6G3135S-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
    BLS6G3135S-120,112

    Mfr.#: BLS6G3135S-120,112

    OMO.#: OMO-BLS6G3135S-120-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMSO
    BLS6G3135S-20,112

    Mfr.#: BLS6G3135S-20,112

    OMO.#: OMO-BLS6G3135S-20-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMOS
    BLS6G3135-20,112

    Mfr.#: BLS6G3135-20,112

    OMO.#: OMO-BLS6G3135-20-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von BLS6G3135-120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    490,50 $
    490,50 $
    10
    465,98 $
    4 659,75 $
    100
    441,45 $
    44 145,00 $
    500
    416,92 $
    208 462,50 $
    1000
    392,40 $
    392 400,00 $
    Beginnen mit
    Top