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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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SI2312BDS-T1-GE3 DISTI # V72:2272_09216793 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 181 |
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SI2312BDS-T1-GE3 DISTI # V36:1790_09216793 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 0 |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 1 Container: Cut Tape (CT) | 92442In Stock |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 1 Container: Digi-Reel® | 92442In Stock |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 3000 Container: Tape & Reel (TR) | 90000In Stock |
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SI2312BDS-T1-GE3 DISTI # 34757283 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 9000 |
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SI2312BDS-T1-GE3 DISTI # 32142891 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 181 |
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SI2312BDS-T1-GE3 DISTI # 30601987 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 49 |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 3000 |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 3000 |
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SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3) Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
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SI2312BDS-T1-GE3 DISTI # 16P3709 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
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SI2312BDS-T1-GE3. DISTI # 16AC0252 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No RoHS: Not Compliant | 0 |
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SI2312BDS-T1-GE3 | Vishay Intertechnologies | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant Min Qty: 1 | 6030Cut Tape/Mini-Reel |
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SI2312BDS-T1-GE3 | Vishay Intertechnologies | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant Min Qty: 3000 | 6000Reel |
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SI2312BDS-T1-GE3 DISTI # 781-SI2312BDS-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant | 7316 |
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SI2312BDS-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant | Americas - 3000 | |
SI2312BDS-T1-GE3 DISTI # XSFP00000063435 | Vishay Siliconix | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant | 99000 in Stock0 on Order |
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SI2312BDST1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant | Europe - 45000 |
Bild | Teil # | Beschreibung |
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Mfr.#: SI2313DS OMO.#: OMO-SI2313DS-1190 |
Neu und Original | |
Mfr.#: SI2313DS-T1 OMO.#: OMO-SI2313DS-T1-1190 |
Neu und Original | |
Mfr.#: SI2313DS-T1-E3 OMO.#: OMO-SI2313DS-T1-E3-1190 |
Neu und Original | |
Mfr.#: SI2313DS-T1-GE3 OMO.#: OMO-SI2313DS-T1-GE3-1190 |
Neu und Original |