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IPT111N20NFDATMA1

IPT111N20NFDATMA1
Mfr. #:
IPT111N20NFDATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPT111N20NFDATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-HSOF-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
96 A
Rds On - Drain-Source-Widerstand:
11.1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
65 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
375 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Serie:
OptiMOS Fast Diode
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
82 S
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
39 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
IPT111N20NFD SP001340384
Gewichtseinheit:
0.002293 oz
Tags
IPT1, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***s
    R***s
    RU

    Strengthening 18

    2019-04-11
    A***n
    A***n
    RU

    B/Y

    2019-01-14
***ical
Trans MOSFET N-CH 200V 96A Automotive 9-Pin(8+Tab) HSOF T/R
***ineon SCT
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom, PG-HSOF-8, RoHS
***ark
Mosfet, N-Ch, 200V, 96A, 175Deg C, 375W; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
The new TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. | Summary of Features: Industrys lowest R DS(on); Highest current capability up to 300A; Very low package parasitics and inductances | Benefits: Less paralleling and cooling required; Highest system reliability; System cost reduction; Enabling very compact design | Target Applications: Forklift; Light electric vehicles (LEV) e.g. e-scooter, e-bikes or -car; Point-of-load (POL); Telecom; efuse
Teil # Mfg. Beschreibung Aktie Preis
IPT111N20NFDATMA1
DISTI # V36:1790_16141104		Infineon Technologies AGTrans MOSFET N-CH 200V 96A Automotive T/R
RoHS: Compliant		0
  • 2000000:$3.4000
  • 1000000:$3.4020
  • 200000:$3.5970
  • 20000:$3.9290
  • 2000:$3.9840
IPT111N20NFDATMA1
DISTI # V72:2272_16141104		Infineon Technologies AGTrans MOSFET N-CH 200V 96A Automotive T/R
RoHS: Compliant		0
    IPT111N20NFDATMA1
    DISTI # IPT111N20NFDATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 200V 96A HSOF-8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$3.9840
    IPT111N20NFDATMA1
    DISTI # IPT111N20NFDATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 200V 96A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$4.2614
    • 500:$4.8927
    • 100:$5.6187
    • 10:$6.7870
    • 1:$7.5100
    IPT111N20NFDATMA1
    DISTI # IPT111N20NFDATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 200V 96A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$4.2614
    • 500:$4.8927
    • 100:$5.6187
    • 10:$6.7870
    • 1:$7.5100
    IPT111N20NFDATMA1
    DISTI # IPT111N20NFDATMA1    		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPT111N20NFDATMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 12000:$3.6900
    • 20000:$3.6900
    • 8000:$3.8900
    • 4000:$3.9900
    • 2000:$4.1900
    IPT111N20NFDATMA1
    DISTI # SP001340384    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001340384)
    RoHS: Compliant
    Min Qty: 2000    		Europe - 0
    • 20000:€3.0900
    • 12000:€3.3900
    • 8000:€3.5900
    • 4000:€3.7900
    • 2000:€3.8900
    IPT111N20NFDATMA1
    DISTI # 45AC7168    		Infineon Technologies AGMOSFET, N-CH, 200V, 96A, HSOF-8,Transistor Polarity:N Channel,Continuous Drain Current Id:96A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes0
    • 1000:$3.9800
    • 500:$4.5700
    • 250:$5.0100
    • 100:$5.2400
    • 50:$5.6400
    • 25:$6.0400
    • 10:$6.3300
    • 1:$7.0100
    IPT111N20NFDATMA1
    DISTI # 726-IPT111N20NFDATMA    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		0
    • 1:$6.9400
    • 10:$6.2700
    • 25:$5.9800
    • 100:$5.1900
    • 250:$4.9600
    • 500:$4.5200
    • 1000:$3.9400
    • 2000:$3.7900
    IPT111N20NFDATMA1
    DISTI # 2803401    		Infineon Technologies AGMOSFET, N-CH, 200V, 96A, HSOF-8
    RoHS: Compliant    		0
    • 1000:$5.7300
    • 500:$5.8400
    • 250:$6.1600
    • 100:$6.5100
    • 10:$7.3700
    • 1:$7.8800
    IPT111N20NFDATMA1
    DISTI # 2803401    		Infineon Technologies AGMOSFET, N-CH, 200V, 96A, HSOF-80
    • 100:£4.0000
    • 50:£4.3100
    • 10:£4.6100
    • 5:£5.3400
    • 1:£5.8600
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IPT111N20NFDATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,94 $
    6,94 $
    10
    6,27 $
    62,70 $
    25
    5,98 $
    149,50 $
    100
    5,19 $
    519,00 $
    250
    4,96 $
    1 240,00 $
    500
    4,52 $
    2 260,00 $
    1000
    3,94 $
    3 940,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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