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FDP8860

FDP8860
Mfr. #:
FDP8860
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 30V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDP8860 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDP8860 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
2.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
254 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FDP8860
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
59 ns
Produktart:
MOSFET
Anstiegszeit:
135 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
35 ns
Gewichtseinheit:
0.063493 oz
Tags
FDP88, FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ
***Yang
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ure Electronics
N-Channel 30 V 2.5 mOhm PowerTrench Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0025Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:1.6V; Threshold Voltage Vgs:20V; Msl:- Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:254W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:9200pF; Current Id Max:80A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.59°C/W; On State Resistance Max:2.5mohm; On State Resistance Typ:1.9mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:254W; Power Dissipation Pd:254W; Pulse Current Idm:556A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
***essParts.Net
FAIRCHILD ISL9N302AP3 / MOSFET N-CH PWM 30V 75A TO-220
***et
TO-220AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH
***ser
MOSFETs N-Channel PWM Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ical
Trans MOSFET N-CH 30V 260A 3-Pin (3+Tab) TO-220AB
***el Electronic
Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
***ark
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.4mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-TO-220; No. of Pins:3 ;RoHS Compliant: Yes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 30 V 8.7 mOhm 36 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH Si 30V 150A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W
***ment14 APAC
MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:150A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***eco
MOSFET,IRLB8721,N-CH,TO-220-3 30V(vds),1.8V(Vgs th),65W,62A
***ment14 APAC
MOSFET, N CH, 30V, 62A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:TO-220AB; Power Dissipation Pd:65W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
***Yang
Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***nell
MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 65W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Alternate Case Style: SOT-78B; Current Id Max: 60A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Pulse Current Idm: 180A; Voltage Vds: 30V; Voltage Vds Typ: 60V; Voltage Vgs Max: 1.9V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***ure Electronics
N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDP8860
DISTI # V99:2348_06359402		ON SemiconductorTrans MOSFET N-CH Si 30V 80A 3-Pin(3+Tab) TO-220AB Rail553
  • 10000:$1.0623
  • 5000:$1.1040
  • 2500:$1.1678
  • 1000:$1.2568
  • 500:$1.5041
  • 100:$1.7210
  • 10:$2.1434
  • 1:$2.7663
FDP8860
DISTI # V36:1790_06359402		ON SemiconductorTrans MOSFET N-CH Si 30V 80A 3-Pin(3+Tab) TO-220AB Rail0
  • 800000:$0.9701
  • 400000:$0.9723
  • 80000:$1.1320
  • 8000:$1.3960
  • 800:$1.4400
FDP8860
DISTI # FDP8860-ND		ON SemiconductorMOSFET N-CH 30V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		824In Stock
  • 5600:$1.1773
  • 3200:$1.2226
  • 800:$1.5849
  • 100:$1.9290
  • 25:$2.2640
  • 10:$2.4000
  • 1:$2.6700
FDP8860
DISTI # 31325261		ON SemiconductorTrans MOSFET N-CH Si 30V 80A 3-Pin(3+Tab) TO-220AB Rail553
  • 6:$2.7663
FDP8860
DISTI # FDP8860		ON SemiconductorTrans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8860)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 650
  • 1000:€0.9499
  • 500:€0.9849
  • 100:€1.0229
  • 50:€1.0639
  • 25:€1.1079
  • 10:€1.2089
  • 1:€1.3299
FDP8860
DISTI # FDP8860		ON SemiconductorTrans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8860)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.9259
  • 4800:$0.9494
  • 3200:$0.9615
  • 1600:$0.9740
  • 800:$0.9804
FDP8860
DISTI # FDP8860		ON SemiconductorTrans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FDP8860)
RoHS: Compliant
Min Qty: 269
Container: Bulk		Americas - 0
  • 807:$1.0900
  • 1345:$1.0900
  • 2690:$1.0900
  • 269:$1.1900
  • 538:$1.1900
FDP8860
DISTI # FDP8860		ON SemiconductorTrans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8860)
RoHS: Compliant
Min Qty: 800
Container: Tube		Asia - 0
  • 40000:$1.2295
  • 20000:$1.2500
  • 8000:$1.2931
  • 4000:$1.3393
  • 2400:$1.3889
  • 1600:$1.4423
  • 800:$1.5000
FDP8860.
DISTI # 15AC2934		Fairchild Semiconductor CorporationTransistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:1.6V,Threshold Voltage Vgs:20V,Power Dissipation Pd:254W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 8000:$0.9260
  • 4800:$0.9500
  • 3200:$0.9620
  • 1600:$0.9740
  • 1:$0.9810
FDP8860
DISTI # 512-FDP8860		ON SemiconductorMOSFET 30V N-Channel PowerTrench MOSFET
RoHS: Compliant		779
  • 1:$2.5400
  • 10:$2.1600
  • 100:$1.7300
  • 500:$1.5100
  • 1000:$1.2600
  • 2500:$1.1700
  • 5000:$1.1300
FDP8860Fairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		37405
  • 1000:$1.2200
  • 500:$1.2900
  • 100:$1.3400
  • 25:$1.4000
  • 1:$1.5100
FDP8860ON Semiconductor 8300
  • 1:$2.9200
  • 100:$1.8600
  • 500:$1.5400
  • 1000:$1.4100
FDP8860
DISTI # XSKDRABV0037642		ON SEMICONDUCTOR 
RoHS: Compliant		640 in Stock0 on Order
  • 640:$1.4000
  • 333:$1.5000
FDP8860
DISTI # 1324804		ON SemiconductorMOSFET, N, TO-220
RoHS: Compliant		0
  • 5000:$1.7400
  • 2500:$1.8000
  • 1000:$1.9400
  • 500:$2.3300
  • 100:$2.6700
  • 10:$3.3300
  • 1:$3.9100
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Verfügbarkeit
Aktie:
779
Auf Bestellung:
2762
Menge eingeben:
Der aktuelle Preis von FDP8860 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,54 $
2,54 $
10
2,16 $
21,60 $
100
1,73 $
173,00 $
500
1,51 $
755,00 $
1000
1,26 $
1 260,00 $
2500
1,17 $
2 925,00 $
5000
1,13 $
5 650,00 $
10000
1,08 $
10 800,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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