We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 Min Qty: 1 Container: Tube | 787In Stock |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND | ON Semiconductor | HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant Min Qty: 10 | 50Tube |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 641 |
|
| HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant | 0 | |
| G10N120BN | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 23 | ||
| HGTG10N120BN | Harris Semiconductor | 45 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247-3 | 201 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1130 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: G1006LYR OMO.#: OMO-G1006LYR-1190 |
Neu und Original |
|
|
Mfr.#: G10100CTFW OMO.#: OMO-G10100CTFW-1190 |
Neu und Original |
|
|
Mfr.#: G1030004-047 OMO.#: OMO-G1030004-047-1190 |
Neu und Original |
|
|
Mfr.#: G104VN01V1 OMO.#: OMO-G104VN01V1-1190 |
Neu und Original |
|
|
Mfr.#: G104XVN01.0 OMO.#: OMO-G104XVN01-0-1190 |
Neu und Original |
|
|
Mfr.#: G10737-12 OMO.#: OMO-G10737-12-1190 |
Neu und Original |
|
|
Mfr.#: G1084-18 OMO.#: OMO-G1084-18-1190 |
Neu und Original |
|
|
Mfr.#: G1084-33TU OMO.#: OMO-G1084-33TU-1190 |
Neu und Original |
|
|
Mfr.#: G10N60 G10N60RUFD OMO.#: OMO-G10N60-G10N60RUFD-1190 |
Neu und Original |
|
|
Mfr.#: G10N60RUFD OMO.#: OMO-G10N60RUFD-1190 |
Neu und Original |