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SI2316BDS-T1-GE3

SI2316BDS-T1-GE3
Mfr. #:
SI2316BDS-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 4.5A 1.66W 50mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2316BDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2316BDS-T1-GE3 DatasheetSI2316BDS-T1-GE3 Datasheet (P4-P6)SI2316BDS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI2316BDS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
4.5 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
6.35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.66 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.45 mm
Länge:
2.9 mm
Serie:
SI2
Transistortyp:
1 N-Channel
Breite:
1.6 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
6 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
4.5 ns
Teil # Aliase:
SI2316BDS-GE3
Gewichtseinheit:
0.000282 oz
Tags
SI2316BDS-T, SI2316B, SI2316, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236
***et
Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
***nell
N CHANNEL MOSFET, 30V, 4.5A, TO-236
***ment14 APAC
N CHANNEL MOSFET, 30V, 4.5A, TO-236; Tra; N CHANNEL MOSFET, 30V, 4.5A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2316BDS-T1-GE3
DISTI # V72:2272_09216799		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1359
  • 1000:$0.2377
  • 500:$0.2933
  • 250:$0.3247
  • 100:$0.3608
  • 25:$0.4261
  • 10:$0.5208
  • 1:$0.6406
SI2316BDS-T1-GE3
DISTI # V36:1790_09216799		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 4.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		78345In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 4.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		75345In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 4.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		75000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2316BDS-T1-GE3
DISTI # 32316314		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		33000
  • 3000:$0.3219
SI2316BDS-T1-GE3
DISTI # 32878769		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		3716
  • 184:$0.4200
SI2316BDS-T1-GE3
DISTI # 30286303		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1359
  • 34:$0.6406
SI2316BDS-T1-GE3
DISTI # SI2316BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1923
  • 18000:$0.1976
  • 12000:$0.2032
  • 6000:$0.2119
  • 3000:$0.2183
SI2316BDS-T1-GE3
DISTI # 16P3710		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3710)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.3000
  • 500:$0.3750
  • 250:$0.4150
  • 100:$0.4550
  • 50:$0.5280
  • 25:$0.5990
  • 1:$0.7500
SI2316BDS-T1-GE3
DISTI # 29X0525		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 4.5A, TO-236-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 50000:$0.1940
  • 30000:$0.2030
  • 20000:$0.2180
  • 10000:$0.2330
  • 5000:$0.2520
  • 1:$0.2580
SI2316BDS-T1-GE3
DISTI # 16P3710		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 4.5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes3716
  • 500:$0.2310
  • 1000:$0.2310
  • 100:$0.2500
  • 250:$0.2500
  • 1:$0.2730
  • 25:$0.2730
  • 50:$0.2730
SI2316BDS-T1-GE3Vishay IntertechnologiesSi2316BDS Series N-Channel 30 V 50 mOhm 1.66 W Surface Mount Mosfet - TO-236
RoHS: Compliant		48000Reel
  • 3000:$0.1960
SI2316BDS-T1-GE3
DISTI # 781-SI2316BDS-T1-GE3		Vishay IntertechnologiesMOSFET 30V 4.5A 1.66W 50mohm @ 10V
RoHS: Compliant		22607
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
SI2316BDS-T1-GE3Vishay SiliconixSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-23620
  • 8:$0.5100
  • 1:$0.6800
SI2316BDS-T1-GE3Vishay IntertechnologiesMOSFET 30V 4.5A 1.66W 50mohm @ 10V
RoHS: Compliant		Americas -
    SI2316BDS-T1-GE3
    DISTI # XSFP00000063437    		Vishay Siliconix 
    RoHS: Compliant    		39000 in Stock0 on Order
    • 39000:$0.2613
    • 3000:$0.2800
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    Verfügbarkeit
    Aktie:
    22
    Auf Bestellung:
    2005
    Menge eingeben:
    Der aktuelle Preis von SI2316BDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,59 $
    0,59 $
    10
    0,48 $
    4,78 $
    100
    0,36 $
    36,30 $
    500
    0,30 $
    150,00 $
    1000
    0,24 $
    240,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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