IXGR35N120B

IXGR35N120B
Mfr. #:
IXGR35N120B
Hersteller:
IXYS
Beschreibung:
IGBT 1200V 70A 200W ISOPLUS247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXGR35N120B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGR35N120B Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
HiPerFAST
Verpackung
Rohr
Paket-Koffer
ISOPLUS247
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
ISOPLUS247
Leistung max
200W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
70A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
140A
Vce-on-Max-Vge-Ic
3.3V @ 15V, 35A
Schaltenergie
3.8mJ (off)
Gate-Gebühr
170nC
Td-ein-aus-25°C
50ns/180ns
Testbedingung
960V, 35A, 4.7 Ohm, 15V
Tags
IXGR35N120B, IXGR35, IXGR3, IXGR, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1200V 70A 200W ISOPLUS247
***nell
IGBT, ISOPLUS247
***ark
IGBT, ISOPLUS247; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1200V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:3.3V; Power Dissipation:200W; Case Style:ISOPLUS-247; Termination Type:Through Hole; Pin ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, ISOPLUS247; DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:70A; Fall Time tf:160ns; Junction to Case Thermal Resistance A:0.5°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:Single; Power Dissipation Max:200W; Rise Time:160ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV
Teil # Mfg. Beschreibung Aktie Preis
IXGR35N120B
DISTI # IXGR35N120B-ND
IXYS CorporationIGBT 1200V 70A 200W ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$14.5103
IXGR35N120BD1
DISTI # IXGR35N120BD1-ND
IXYS CorporationIGBT 1200V 54A 250W ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$9.7507
IXGR35N120B
DISTI # 747-IXGR35N120B
IXYS CorporationIGBT Transistors 70 Amps 1200V 3.3 Rds
RoHS: Compliant
0
    IXGR35N120BD1
    DISTI # 747-IXGR35N120BD1
    IXYS CorporationIGBT Transistors 23 Amps 1200V 3.7 Rds
    RoHS: Compliant
    10
    • 1:$11.8900
    • 10:$10.7000
    • 25:$9.7500
    • 50:$8.9100
    • 100:$8.8000
    • 250:$8.0200
    • 500:$7.3700
    • 1000:$6.4200
    IXGR35N120B
    DISTI # 1300113
    IXYS CorporationIGBT, ISOPLUS247
    RoHS: Compliant
    0
    • 2500:$13.2400
    • 1000:$13.9000
    • 250:$14.3800
    • 500:$14.3800
    • 100:$15.1700
    • 25:$15.7400
    • 10:$17.3800
    • 1:$18.5400
    Bild Teil # Beschreibung
    IXGR35N120BD1

    Mfr.#: IXGR35N120BD1

    OMO.#: OMO-IXGR35N120BD1

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IXGR35N120B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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