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BSC16DN25NS3 G

BSC16DN25NS3 G
Mfr. #:
BSC16DN25NS3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC16DN25NS3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
10.9 A
Rds On - Drain-Source-Widerstand:
165 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
8.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
62.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
7 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 ns
Typische Einschaltverzögerungszeit:
6 ns
Teil # Aliase:
BSC16DN25NS3GATMA1 BSC16DN25NS3GXT SP000781782
Tags
BSC16D, BSC16, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC16DN25NS3GATMA1
DISTI # V72:2272_06383949		Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP T/R
RoHS: Compliant		1100
  • 1000:$0.7420
  • 500:$0.8759
  • 250:$0.9399
  • 100:$0.9998
  • 25:$1.1421
  • 10:$1.2157
  • 1:$1.3980
BSC16DN25NS3GATMA1
DISTI # BSC16DN25NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 10.9A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		16606In Stock
  • 1000:$0.9328
  • 500:$1.1258
  • 100:$1.4475
  • 10:$1.8010
  • 1:$1.9900
BSC16DN25NS3GATMA1
DISTI # BSC16DN25NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 10.9A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		16606In Stock
  • 1000:$0.9328
  • 500:$1.1258
  • 100:$1.4475
  • 10:$1.8010
  • 1:$1.9900
BSC16DN25NS3GATMA1
DISTI # BSC16DN25NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 10.9A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		15000In Stock
  • 5000:$0.8119
BSC16DN25NS3GATMA1
DISTI # 31038270		Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 5000:$0.7910
BSC16DN25NS3GATMA1
DISTI # 27068690		Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP T/R
RoHS: Compliant		1100
  • 1000:$0.7420
  • 500:$0.8759
  • 250:$0.9399
  • 100:$0.9998
  • 25:$1.1421
  • 10:$1.2157
  • 9:$1.3980
BSC16DN25NS3GATMA1
DISTI # BSC16DN25NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC16DN25NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8179
  • 10000:$0.7879
  • 20000:$0.7599
  • 30000:$0.7339
  • 50000:$0.7209
BSC16DN25NS3GATMA1
DISTI # 50Y1814		Infineon Technologies AGMOSFET Transistor, N Channel, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V RoHS Compliant: Yes3215
  • 1:$1.6800
  • 10:$1.4200
  • 25:$1.3300
  • 50:$1.2300
  • 100:$1.1400
  • 250:$1.0700
  • 500:$0.9940
  • 1000:$0.8240
BSC16DN25NS3 G
DISTI # 726-BSC16DN25NS3G		Infineon Technologies AGMOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
RoHS: Compliant		14119
  • 1:$1.6800
  • 10:$1.4200
  • 100:$1.1400
  • 500:$0.9940
  • 1000:$0.8240
  • 2500:$0.7670
  • 5000:$0.7390
  • 10000:$0.7100
BSC16DN25NS3GATMA1
DISTI # C1S322000232750		Infineon Technologies AGTrans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP
RoHS: Compliant		1100
  • 250:$0.9399
  • 100:$0.9998
  • 25:$1.1421
  • 10:$1.2157
BSC16DN25NS3GATMA1
DISTI # C1S322000626719		Infineon Technologies AGMOSFETs
RoHS: Compliant		10000
  • 5000:$0.7930
BSC16DN25NS3GATMA1
DISTI # 2480748		Infineon Technologies AGMOSFET, N-CH, 250V, 10.9A, TDSON-8
RoHS: Compliant		3215
  • 5:£1.5400
  • 25:£1.4200
  • 100:£1.1400
  • 250:£1.0200
  • 500:£0.8900
BSC16DN25NS3GATMA1
DISTI # 2480748		Infineon Technologies AGMOSFET, N-CH, 250V, 10.9A, TDSON-8
RoHS: Compliant		3215
  • 1:$2.6600
  • 10:$2.2500
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3100
  • 2500:$1.2200
  • 5000:$1.1700
  • 10000:$1.1300
BSC16DN25NS3GATMA1
DISTI # 2480748RL		Infineon Technologies AGMOSFET, N-CH, 250V, 10.9A, TDSON-8
RoHS: Compliant		0
  • 1:$2.6600
  • 10:$2.2500
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3100
  • 2500:$1.2200
  • 5000:$1.1700
  • 10000:$1.1300
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OMO.#: OMO-AD7687BRMZ-ANALOG-DEVICES

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von BSC16DN25NS3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,67 $
1,67 $
10
1,42 $
14,20 $
100
1,13 $
113,00 $
500
0,99 $
497,00 $
1000
0,82 $
824,00 $
2500
0,77 $
1 917,50 $
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